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@ARTICLE{Beyer:281144,
      author       = {Beyer, W. and Bergmann, J. and Breuer, U. and Finger, F.
                      and Lambertz, A. and Merdzhanova, T. and Nickel, N. H. and
                      Pennartz, F. and Schmidt, T. and Zastrow, U.},
      title        = {{C}omparison of {L}aser and {O}ven {A}nnealing {E}ffects on
                      {H}ydrogen and {M}icrostructure in {T}hin {F}ilm {S}ilicon},
      journal      = {MRS online proceedings library},
      volume       = {1770},
      issn         = {1946-4274},
      address      = {Warrendale, Pa.},
      publisher    = {MRS},
      reportid     = {FZJ-2016-00849},
      pages        = {1 - 6},
      year         = {2015},
      abstract     = {Laser and oven annealing effects on hydrogen concentration,
                      hydrogen diffusion and material microstructure in
                      hydrogenated amorphous silicon films deposited on
                      crystalline silicon substrates are compared. For laser
                      annealing, a 6 W green (532 nm) continuous wave laser with
                      100 µm focus diameter was applied and samples of about 1
                      cm2 were scanned in ambient with a line distance of 50 µm
                      and at a speed of 1 – 100 mm/s. Hydrogen content and
                      microstructure were measured by infrared spectroscopy, and
                      hydrogen diffusion was investigated by secondary ion mass
                      spectroscopy (SIMS) measurements of depth profiles of
                      deuterium and hydrogen in layered structures of deuterated
                      and hydrogenated material. The results show that in both
                      annealing experiments hydrogen diffuses predominantly in
                      form of atoms although some formation of H2 molecules cannot
                      be excluded. By comparison of laser and oven treatment, an
                      effective temperature describing the laser treated state can
                      be defined. Furthermore, the temperature of the thin silicon
                      film during laser treatment is estimated.},
      cin          = {IEK-5 / ZEA-3},
      ddc          = {670},
      cid          = {I:(DE-Juel1)IEK-5-20101013 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      doi          = {10.1557/opl.2015.431},
      url          = {https://juser.fz-juelich.de/record/281144},
}