TY  - JOUR
AU  - Pomaska, M.
AU  - Beyer, W.
AU  - Neumann, E.
AU  - Finger, F.
AU  - Ding, K.
TI  - Impact of microcrystalline silicon carbide growth using hot-wire chemical vapor deposition on crystalline silicon surface passivation
JO  - Thin solid films
VL  - 595
SN  - 0040-6090
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2016-01036
SP  - 217 - 220
PY  - 2015
AB  - Highly crystalline microcrystalline silicon carbide (μc-SiC:H) with excellent optoelectronic material properties is a promising candidate as highly transparent doped layer in silicon heterojunction (SHJ) solar cells. These high quality materials are usually produced using hot wire chemical vapor deposition under aggressive growth conditions giving rise to the removal of the underlying passivation layer and thus the deterioration of the crystalline silicon (c-Si) surface passivation. In this work, we introduced the n-type μc-SiC:H/n-type μc-SiOx:H/intrinsic a-SiOx:H stack as a front layer configuration for p-type SHJ solar cells with the μc-SiOx:H layer acting as an etch-resistant layer against the reactive deposition conditions during the μc-SiC:H growth. We observed that the unfavorable expansion of micro-voids at the c-Si interface due to the in-diffusion of hydrogen atoms through the layer stack might be responsible for the deterioration of surface passivation. Excellent lifetime values were achieved under deposition conditions which are needed to grow high quality μc-SiC:H layers for SHJ solar cells.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000365812900002
DO  - DOI:10.1016/j.tsf.2015.05.057
UR  - https://juser.fz-juelich.de/record/281337
ER  -