% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Pomaska:281337,
      author       = {Pomaska, M. and Beyer, W. and Neumann, E. and Finger, F.
                      and Ding, K.},
      title        = {{I}mpact of microcrystalline silicon carbide growth using
                      hot-wire chemical vapor deposition on crystalline silicon
                      surface passivation},
      journal      = {Thin solid films},
      volume       = {595},
      issn         = {0040-6090},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-01036},
      pages        = {217 - 220},
      year         = {2015},
      abstract     = {Highly crystalline microcrystalline silicon carbide
                      (μc-SiC:H) with excellent optoelectronic material
                      properties is a promising candidate as highly transparent
                      doped layer in silicon heterojunction (SHJ) solar cells.
                      These high quality materials are usually produced using hot
                      wire chemical vapor deposition under aggressive growth
                      conditions giving rise to the removal of the underlying
                      passivation layer and thus the deterioration of the
                      crystalline silicon (c-Si) surface passivation. In this
                      work, we introduced the n-type μc-SiC:H/n-type
                      μc-SiOx:H/intrinsic a-SiOx:H stack as a front layer
                      configuration for p-type SHJ solar cells with the μc-SiOx:H
                      layer acting as an etch-resistant layer against the reactive
                      deposition conditions during the μc-SiC:H growth. We
                      observed that the unfavorable expansion of micro-voids at
                      the c-Si interface due to the in-diffusion of hydrogen atoms
                      through the layer stack might be responsible for the
                      deterioration of surface passivation. Excellent lifetime
                      values were achieved under deposition conditions which are
                      needed to grow high quality μc-SiC:H layers for SHJ solar
                      cells.},
      cin          = {IEK-5},
      ddc          = {070},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000365812900002},
      doi          = {10.1016/j.tsf.2015.05.057},
      url          = {https://juser.fz-juelich.de/record/281337},
}