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@ARTICLE{Jost:281807,
      author       = {Jost, Peter and Volker, Hanno and Poitz, Annika and
                      Poltorak, Christian and Zalden, Peter and Schäfer, Tobias
                      and Lange, Felix R. L. and Schmidt, Rüdiger M. and
                      Holländer, Bernhard and Wirtssohn, Matti R. and Wuttig,
                      Matthias},
      title        = {{D}isorder-{I}nduced {L}ocalization in {C}rystalline
                      {P}seudo-{B}inary {G}e{T}e-{S}b 2 {T}e 3 {A}lloys between
                      {G}e 3 {S}b 2 {T}e 6 and {G}e{T}e},
      journal      = {Advanced functional materials},
      volume       = {25},
      number       = {40},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2016-01474},
      pages        = {6399 - 6406},
      year         = {2015},
      abstract     = {Disorder has a tremendous impact on charge transport in
                      crystalline compounds on the pseudo-binary line between
                      Sb2Te3 and GeTe. Directly after crystallization, the
                      pronounced disorder on the cation sublattice renders
                      crystalline Ge1Sb2Te4—a composition with a carrier density
                      of the order of 1020 cm−3—an Anderson insulator.
                      Annealing, however, induces the reduction of disorder and
                      eventually triggers an insulator-to-metal transition. This
                      study presents data on the electrical properties, the
                      optical conductivity, and structural properties of the
                      pseudo-binary compositions between Ge3Sb2Te6 and GeTe. In
                      contrast to the preceding investigations, which rely on the
                      annealing temperature for tuning the electrical properties,
                      this study elucidates the impact of stoichiometry and
                      demonstrates that the stoichiometry may be employed as an
                      alternative control parameter for the metal-to-insulator
                      transition. The combination of annealing temperature and
                      stoichiometry, therefore, provides a rich playground for
                      tailoring disorder and, as a consequence, the transport of
                      charge.},
      cin          = {PGI-9},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000363685900011},
      doi          = {10.1002/adfm.201500848},
      url          = {https://juser.fz-juelich.de/record/281807},
}