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@ARTICLE{Lobe:283555,
      author       = {Lobe, Sandra and Dellen, Christian and Finsterbusch, M. and
                      Gehrke, H.-G. and Sebold, D. and Tsai, C.-L. and Uhlenbruck,
                      S. and Guillon, Olivier},
      title        = {{R}adio frequency magnetron sputtering of
                      {L}i7{L}a3{Z}r2{O}12 thin films for solid-state batteries},
      journal      = {Journal of power sources},
      volume       = {307},
      issn         = {0378-7753},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-01871},
      pages        = {684 - 689},
      year         = {2016},
      abstract     = {Thin film batteries based on solid electrolytes having a
                      garnet-structure like Li7La3Zr2O12 (LLZ) are considered as
                      one option for safer batteries with increased power density.
                      In this work we show the deposition of Ta- and
                      Al-substituted LLZ thin films on stainless steel substrates
                      by r.f. magnetron sputtering. The thin films were
                      characterized by XRD, SEM and time-of-flight-secondary ion
                      mass spectrometry (ToF-SIMS) to determine crystal structure,
                      morphology and element distribution. The substrate
                      temperature was identified to be one important parameter for
                      the formation of cubic garnet-structured LLZ thin films. LLZ
                      formation starts at around 650 °C. Single phase cubic thin
                      films were obtained at substrate temperatures of 700 °C and
                      higher. At these temperatures an interlayer is formed.
                      Combination of SEM, ToF-SIMS and XRD indicated that this
                      layer consists of γ-LiAlO2. The combined total ionic
                      conductivity of the γ-LiAlO2 interlayer and the LLZ thin
                      film (perpendicular to the plane) was determined to be 2.0
                      × 10−9 S cm−1 for the sample deposited at 700 °C.
                      In-plane measurements showed a room temperature conductivity
                      of 1.2 × 10−4 S cm−1 with an activation energy of 0.47
                      eV for the LLZ thin film.},
      cin          = {IEK-1 / JARA-ENERGY},
      ddc          = {620},
      cid          = {I:(DE-Juel1)IEK-1-20101013 / $I:(DE-82)080011_20140620$},
      pnm          = {131 - Electrochemical Storage (POF3-131) / HITEC -
                      Helmholtz Interdisciplinary Doctoral Training in Energy and
                      Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-131 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000370884000083},
      doi          = {10.1016/j.jpowsour.2015.12.054},
      url          = {https://juser.fz-juelich.de/record/283555},
}