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@BOOK{Waser:283572,
key = {283572},
editor = {Waser, Rainer and Wuttig, Matthias},
title = {{M}emristive {P}henomena –{F}rom {F}undamental {P}hysics
to {N}euromorphic {C}omputing},
volume = {113},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2016-01886},
isbn = {978-3-95806-091-3},
series = {Schriften des Forschungszentrums Jülich. Reihe
Schlüsseltechnologien / Key Technologies},
pages = {getr. Zählung},
year = {2016},
abstract = {Memristive phenomena combine the functionalities of
electronic resistance and data memory in solid-state
elements, which are able to change their resistance as a
result of an electrical stimulation in a non-volatile
fashion. In nanoelectronics, this functionality can be used
for information storage and unconventional logic, as well as
neuromorphic computing concepts that are aimed at mimicking
the operation of the human brain. A multitude of fascinating
memristive phenomena has emerged over the past two decades.
These phenomena typically occur in oxides and higher
chalcogenides and are one of the hottest topics in current
solid-state research, comprising unusual phase transitions,
spintronic and multiferroic tunneling effects, as well as
nanoscale redox processes by local ion motion. They involve
electron correlation, quantum point contact effects and
exotic conformation changes at the atomic level. The Spring
School provides a comprehensive introduction to and an
overview of current research topics covering the physics of
memristive phenomena, with an emphasis on an understanding
of the underlying basic principles. The inspiration to
organize this school arose from our Cooperative Research
Center $\textbf{Resistively Switching Chalcogenides for
Future Electronics (SFB 917)}$ which has been funded by the
Deutsche Forschungsgemeinschaft since July 2011. The
overarching aim of the SFB 917 is to advance the microscopic
understanding of memristive phenomena utilizing changes in
the atomic configuration, in particular in the phase and the
valence of oxides and higher chalcogenides. To explore the
full potential and pave the way for an ultimately
energy-efficient electronics technology it is mandatory to
realise ultrahigh scalability, fast switching kinetics and
long retention times. The promise to realise fast,
nonvolatile devices which may enable novel, brain-like
functionalities by neuromorphic computing, defines the
technological potential of the SFB. The school comprises
approximately 50 hours of lectures, including discussions,
as well as the opportunity to visit the participating
Institutes in Forschungszentrum Jülich. All lectures will
be given in English. Registered participants will receive a
book of lecture notes that contains all of the material
presented during the school. The lectures are grouped
together in five sections, which are outlined below. [...]},
month = {Feb},
date = {2016-02-22},
organization = {47th IFF Spring School, Jülich
(Germany), 22 Feb 2016 - 4 Mar 2016},
cin = {PGI-7 / JARA-FIT / IAS-1 / JCNS-2 / Neutronenstreuung ;
JCNS-1},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)JCNS-2-20110106 /
I:(DE-Juel1)JCNS-1-20110106},
pnm = {899 - ohne Topic (POF3-899)},
pid = {G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)26 / PUB:(DE-HGF)3},
url = {https://juser.fz-juelich.de/record/283572},
}