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@BOOK{Waser:283572,
      key          = {283572},
      editor       = {Waser, Rainer and Wuttig, Matthias},
      title        = {{M}emristive {P}henomena –{F}rom {F}undamental {P}hysics
                      to {N}euromorphic {C}omputing},
      volume       = {113},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2016-01886},
      isbn         = {978-3-95806-091-3},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {getr. Zählung},
      year         = {2016},
      abstract     = {Memristive phenomena combine the functionalities of
                      electronic resistance and data memory in solid-state
                      elements, which are able to change their resistance as a
                      result of an electrical stimulation in a non-volatile
                      fashion. In nanoelectronics, this functionality can be used
                      for information storage and unconventional logic, as well as
                      neuromorphic computing concepts that are aimed at mimicking
                      the operation of the human brain. A multitude of fascinating
                      memristive phenomena has emerged over the past two decades.
                      These phenomena typically occur in oxides and higher
                      chalcogenides and are one of the hottest topics in current
                      solid-state research, comprising unusual phase transitions,
                      spintronic and multiferroic tunneling effects, as well as
                      nanoscale redox processes by local ion motion. They involve
                      electron correlation, quantum point contact effects and
                      exotic conformation changes at the atomic level. The Spring
                      School provides a comprehensive introduction to and an
                      overview of current research topics covering the physics of
                      memristive phenomena, with an emphasis on an understanding
                      of the underlying basic principles. The inspiration to
                      organize this school arose from our Cooperative Research
                      Center $\textbf{Resistively Switching Chalcogenides for
                      Future Electronics (SFB 917)}$ which has been funded by the
                      Deutsche Forschungsgemeinschaft since July 2011. The
                      overarching aim of the SFB 917 is to advance the microscopic
                      understanding of memristive phenomena utilizing changes in
                      the atomic configuration, in particular in the phase and the
                      valence of oxides and higher chalcogenides. To explore the
                      full potential and pave the way for an ultimately
                      energy-efficient electronics technology it is mandatory to
                      realise ultrahigh scalability, fast switching kinetics and
                      long retention times. The promise to realise fast,
                      nonvolatile devices which may enable novel, brain-like
                      functionalities by neuromorphic computing, defines the
                      technological potential of the SFB. The school comprises
                      approximately 50 hours of lectures, including discussions,
                      as well as the opportunity to visit the participating
                      Institutes in Forschungszentrum Jülich. All lectures will
                      be given in English. Registered participants will receive a
                      book of lecture notes that contains all of the material
                      presented during the school. The lectures are grouped
                      together in five sections, which are outlined below. [...]},
      month         = {Feb},
      date          = {2016-02-22},
      organization  = {47th IFF Spring School, Jülich
                       (Germany), 22 Feb 2016 - 4 Mar 2016},
      cin          = {PGI-7 / JARA-FIT / IAS-1 / JCNS-2 / Neutronenstreuung ;
                      JCNS-1},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)JCNS-2-20110106 /
                      I:(DE-Juel1)JCNS-1-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)26 / PUB:(DE-HGF)3},
      url          = {https://juser.fz-juelich.de/record/283572},
}