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@ARTICLE{Paul:29229,
      author       = {Paul, A. and Damm, T. and Bürgler, D. E. and Stein, S. and
                      Kohlstedt, H. and Grünberg, P. A.},
      title        = {{O}ptimizing the giant magnetoresistance of
                      {N}i{F}e/{C}u/{C}o pseudo spin-valves prepared by magnetron
                      sputtering},
      journal      = {Applied physics letters},
      volume       = {82},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-29229},
      pages        = {1905 - 1907},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {We study the dependence of magnetic and magnetotransport
                      properties of NiFe/Cu/Co pseudo spin-valves on the pressure
                      of the Ar sputtering gas during magnetron deposition. The
                      giant magnetoresistance (GMR) ratio as a function of the
                      sputtering pressure behaves nonmonotonically with a maximum
                      of about $4\%$ at an intermediate pressure of 0.87x10(-2)
                      mbar. Magneto-optic Kerr-effect measurements reveal
                      different coercive fields and independent switching of the
                      Co and NiFe layers. The structural characterization by x-ray
                      scattering shows no significant pressure dependence.
                      However, we observe by atomic force microscopy a variation
                      of the grain structure with increasing sputtering pressure;
                      the grain size first decreases and then the grains start
                      clustering for highest pressures. The reduced coercive field
                      and the lower GMR ratio indicate that the clustered grains
                      have weaker magnetic pinning and increased spin-independent
                      scattering. (C) 2003 American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEE / IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB38 / I:(DE-Juel1)VDB35},
      pnm          = {Kondensierte Materie / Materialien, Prozesse und
                      Bauelemente für die Mikro- und Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK242 / G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181666500033},
      doi          = {10.1063/1.1563056},
      url          = {https://juser.fz-juelich.de/record/29229},
}