Hauptseite > Publikationsdatenbank > Optimization of Pt/SBT/CeO2SI(100) gate stacks for low voltage ferroelectric field effect devices > print

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005     20180210123624.0
024 7 _ |a 0015-0193
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082 _ _ |a 530
100 1 _ |a Haneder, T.
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245 _ _ |a Optimization of Pt/SBT/CeO2SI(100) gate stacks for low voltage ferroelectric field effect devices
260 _ _ |a London [u.a.]
|b Taylor & Francis
|c 2001
300 _ _ |a 47 - 54
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a article
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440 _ 0 |a Ferroelectrics
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536 _ _ |a Festkörperforschung für die Informationstechnik
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700 1 _ |a Hönlein, W.
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700 1 _ |a Bachhofer, H.
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700 1 _ |a von Philipsborn, H.
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700 1 _ |a Waser, R.
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773 _ _ |g Vol. 34, p. 47 - 54
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|t Ferroelectrics
|v 34
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