| 001 | 29426 | ||
| 005 | 20180210131258.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1080/10584580108222312 |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Szot, K. |0 P:(DE-Juel1)VDB2799 |b 0 |u FZJ |
| 245 | _ | _ | |a Segregation phenomena in thin films of BaTio3 |
| 260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2001 |
| 300 | _ | _ | |a 303 -310 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 33 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The near-surface region in perovskite bulk crystals is known to be subject to segregation processes at elevated temperatures which can lead to the formation of non-perovskite phases. We have addressed the question whether analogue phenomena may occur in thin films, Thin films of BaTiO3 prepared by different methods (PLD, CSD) and heat-treated in the temperature range of 700 degreesC-1000 degreesC are characterised by surface analytical methods and microanalysis (AFM, SIMS, XPS). Our studies reveals dramatic changes in the surface morphology and in-depth elemental distribution suggesting a chemical restructuring comparable to the effects known for single crystalline BaTiO3. Possible driving forces for the observed segregation phenomena are discussed taking into account specific properties of the thin films. |
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| 653 | 2 | 0 | |2 Author |a thin films |
| 653 | 2 | 0 | |2 Author |a surface layer |
| 653 | 2 | 0 | |2 Author |a surface segregation |
| 653 | 2 | 0 | |2 Author |a surface morphology |
| 653 | 2 | 0 | |2 Author |a atomic force microscopy |
| 700 | 1 | _ | |a Hoffmann, S. |0 P:(DE-Juel1)VDB630 |b 1 |u FZJ |
| 700 | 1 | _ | |a Speier, W. |0 P:(DE-Juel1)125382 |b 2 |u FZJ |
| 700 | 1 | _ | |a Breuer, U. |0 P:(DE-Juel1)VDB2782 |b 3 |u FZJ |
| 700 | 1 | _ | |a Siegert, M. |0 P:(DE-Juel1)VDB2542 |b 4 |u FZJ |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 5 |u FZJ |
| 773 | _ | _ | |a 10.1080/10584580108222312 |g Vol. 33, p. 303 -310 |p 303 -310 |q 33<303 -310 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 33 |y 2001 |x 1058-4587 |
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| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
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