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000029442 084__ $$2WoS$$aEngineering, Electrical & Electronic
000029442 084__ $$2WoS$$aPhysics, Applied
000029442 084__ $$2WoS$$aPhysics, Condensed Matter
000029442 1001_ $$0P:(DE-Juel1)VDB3101$$aOhly, C.$$b0$$uFZJ
000029442 245__ $$aHigh temperature conductivity behavior of doped SrTiO3 thin films
000029442 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2001
000029442 300__ $$a363
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000029442 440_0 $$02659$$aIntegrated Ferroelectrics$$v33$$x1058-4587
000029442 500__ $$aRecord converted from VDB: 12.11.2012
000029442 520__ $$aIn order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700 degreesC to 1000 degreesC and at oxygen partial pressures (pO(2)) between 10(-20) bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films. as a function of pO(2), revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent.
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000029442 65320 $$2Author$$aSrTiO3
000029442 65320 $$2Author$$athin film
000029442 65320 $$2Author$$aconductivity
000029442 65320 $$2Author$$aoxygen partial pressure
000029442 65320 $$2Author$$amorphology
000029442 65320 $$2Author$$adefect chemistry
000029442 65320 $$2Author$$asegregation phenomena
000029442 7001_ $$0P:(DE-Juel1)VDB630$$aHoffmann, S.$$b1$$uFZJ
000029442 7001_ $$0P:(DE-Juel1)VDB2799$$aSzot, K.$$b2$$uFZJ
000029442 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000029442 773__ $$0PERI:(DE-600)2037916-X$$a10.1080/10584580108222318$$gVol. 33, p. 363$$p363$$q33<363$$tIntegrated ferroelectrics$$v33$$x1058-4587$$y2001
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000029442 9141_ $$aurl$$y2001
000029442 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000029442 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
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