TY  - JOUR
AU  - Ohly, C.
AU  - Hoffmann, S.
AU  - Szot, K.
AU  - Waser, R.
TI  - High temperature conductivity behavior of doped SrTiO3 thin films
JO  - Integrated ferroelectrics
VL  - 33
SN  - 1058-4587
CY  - London [u.a.]
PB  - Taylor & Francis
M1  - PreJuSER-29442
SP  - 363
PY  - 2001
N1  - Record converted from VDB: 12.11.2012
AB  - In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700 degreesC to 1000 degreesC and at oxygen partial pressures (pO(2)) between 10(-20) bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films. as a function of pO(2), revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000167524500038
DO  - DOI:10.1080/10584580108222318
UR  - https://juser.fz-juelich.de/record/29442
ER  -