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@ARTICLE{Ohly:29442,
      author       = {Ohly, C. and Hoffmann, S. and Szot, K. and Waser, R.},
      title        = {{H}igh temperature conductivity behavior of doped
                      {S}r{T}i{O}3 thin films},
      journal      = {Integrated ferroelectrics},
      volume       = {33},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-29442},
      pages        = {363},
      year         = {2001},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In order to investigate the dominant charge transport
                      mechanisms of doped SrTiO3 thin films, high temperature
                      measurements were performed under varying oxygen partial
                      pressures. To meet specific demands of SrTiO3 thin films, a
                      common 4-point measuring setup was improved profoundly by
                      full triaxial shielding and the use of a solid state oxygen
                      pump (made of YSZ). This allowed a precise analysis in the
                      temperature range from 700 degreesC to 1000 degreesC and at
                      oxygen partial pressures (pO(2)) between 10(-20) bar and 1
                      bar. The conduction behavior of (doped) SrTiO3 thin films.
                      as a function of pO(2), revealed characteristics that
                      substantially differ from those of bulk ceramics and cannot
                      be explained by point defect chemistry. Additionally,
                      segregation effects have been observed which lead to a
                      restructuring of the film's morphology to a significant
                      extent.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Festkörperforschung für die Informationstechnik},
      pid          = {G:(DE-Juel1)FUEK54},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000167524500038},
      doi          = {10.1080/10584580108222318},
      url          = {https://juser.fz-juelich.de/record/29442},
}