Gast ::
| Hauptseite > Publikationsdatenbank > High temperature conductivity behavior of doped SrTiO3 thin films > print |
| Hauptseite > Publikationsdatenbank > High temperature conductivity behavior of doped SrTiO3 thin films > print |
| 001 | 29442 | ||
| 005 | 20190625110230.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1080/10584580108222318 |
| 024 | 7 | _ | |2 WOS |a WOS:000167524500038 |
| 024 | 7 | _ | |a altmetric:21809842 |2 altmetric |
| 037 | _ | _ | |a PreJuSER-29442 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 620 |
| 084 | _ | _ | |2 WoS |a Engineering, Electrical & Electronic |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Ohly, C. |0 P:(DE-Juel1)VDB3101 |b 0 |u FZJ |
| 245 | _ | _ | |a High temperature conductivity behavior of doped SrTiO3 thin films |
| 260 | _ | _ | |a London [u.a.] |b Taylor & Francis |c 2001 |
| 300 | _ | _ | |a 363 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Integrated Ferroelectrics |x 1058-4587 |0 2659 |v 33 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a In order to investigate the dominant charge transport mechanisms of doped SrTiO3 thin films, high temperature measurements were performed under varying oxygen partial pressures. To meet specific demands of SrTiO3 thin films, a common 4-point measuring setup was improved profoundly by full triaxial shielding and the use of a solid state oxygen pump (made of YSZ). This allowed a precise analysis in the temperature range from 700 degreesC to 1000 degreesC and at oxygen partial pressures (pO(2)) between 10(-20) bar and 1 bar. The conduction behavior of (doped) SrTiO3 thin films. as a function of pO(2), revealed characteristics that substantially differ from those of bulk ceramics and cannot be explained by point defect chemistry. Additionally, segregation effects have been observed which lead to a restructuring of the film's morphology to a significant extent. |
| 536 | _ | _ | |a Festkörperforschung für die Informationstechnik |c 23.42.0 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK54 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a SrTiO3 |
| 653 | 2 | 0 | |2 Author |a thin film |
| 653 | 2 | 0 | |2 Author |a conductivity |
| 653 | 2 | 0 | |2 Author |a oxygen partial pressure |
| 653 | 2 | 0 | |2 Author |a morphology |
| 653 | 2 | 0 | |2 Author |a defect chemistry |
| 653 | 2 | 0 | |2 Author |a segregation phenomena |
| 700 | 1 | _ | |a Hoffmann, S. |0 P:(DE-Juel1)VDB630 |b 1 |u FZJ |
| 700 | 1 | _ | |a Szot, K. |0 P:(DE-Juel1)VDB2799 |b 2 |u FZJ |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 3 |u FZJ |
| 773 | _ | _ | |a 10.1080/10584580108222318 |g Vol. 33, p. 363 |p 363 |q 33<363 |0 PERI:(DE-600)2037916-X |t Integrated ferroelectrics |v 33 |y 2001 |x 1058-4587 |
| 909 | C | O | |o oai:juser.fz-juelich.de:29442 |p VDB |
| 913 | 1 | _ | |k 23.42.0 |v Festkörperforschung für die Informationstechnik |l Grundlagenforschung zur Informationstechnik |b Informationstechnik |0 G:(DE-Juel1)FUEK54 |x 0 |
| 914 | 1 | _ | |a url |y 2001 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-EKM |l Elektrokeramische Materialien |d 31.12.2003 |g IFF |0 I:(DE-Juel1)VDB35 |x 0 |
| 970 | _ | _ | |a VDB:(DE-Juel1)2662 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|