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@ARTICLE{Wehner:30038,
      author       = {Wehner, A. and Jeliazova, Y. and Franchy, R.},
      title        = {{G}rowth and oxidation of a {N}i3{A}l alloy on {N}i(100)},
      journal      = {Surface science},
      volume       = {531},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-30038},
      pages        = {287 - 294},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The growth and oxidation of a thin film of Ni3Al grown on
                      Ni(1 0 0) were studied using Auger electron spectroscopy
                      (AES), low energy electron diffraction (LEED), and high
                      resolution electron energy loss spectroscopy (EELS). At 300
                      K. a 12 Angstrom thick layer of aluminium was deposited on a
                      Ni(1 0 0) surface and subsequently annealed to 1150 K
                      resulting in a thin film of Ni3Al which grows with the (10
                      0) plane parallel to the (10 0) surface of the substrate.
                      Oxidation at 300 K of Ni3Al/Ni(1 0 0) until saturation leads
                      to the growth of an aluminium oxide layer consisting of
                      different alumina phases. By annealing up to 1000 K, a well
                      ordered film of the Al2O3 film is formed which exhibits in
                      the EEL spectra Fuchs-Kliewer phonons at 420, 640 and 880
                      cm(-1). The LEED pattern of the oxide shows a twelvefold
                      ring structure. This LEED pattern is explained by two
                      domains with hexagonal structure which are rotated by
                      90degrees with respect to each other. The lattice constant
                      of the hexagonal structure amounts to similar to2.87
                      Angstrom. The EELS data and the LEED pattern suggest that
                      the gamma'-Al2O3 phase is formed which grows with the (1 1
                      1) plane parallel to the Ni(1 0 0) surface. (C) 2003
                      Elsevier Science B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000183254900013},
      doi          = {10.1016/S0039-6028(03)00516-8},
      url          = {https://juser.fz-juelich.de/record/30038},
}