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| Home > Publications database > Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films > print |
| 001 | 30093 | ||
| 005 | 20240610121312.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/S0022-0248(02)01985-1 |
| 024 | 7 | _ | |2 WOS |a WOS:000180362900018 |
| 037 | _ | _ | |a PreJuSER-30093 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Crystallography |
| 084 | _ | _ | |2 WoS |a Materials Science, Multidisciplinary |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Jia, C. L. |b 0 |u FZJ |0 P:(DE-Juel1)VDB5020 |
| 245 | _ | _ | |a Introduction and characterization of interfacial defects in SrRuO3/BaTiO3/SrRuO3 multilayer films |
| 260 | _ | _ | |a Amsterdam [u.a.] |b Elsevier |c 2003 |
| 300 | _ | _ | |a 381 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Journal of Crystal Growth |x 0022-0248 |0 3235 |v 247 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a A Ruddlesden-Popper-type planar fault was introduced at the SrRuO3/BaTiO3 interface of a SrRuO3/BaTiO3/ SrRuO3 heterofilm system using different processing conditions for the individual film layer. This fault occurs continuously and homogeneously along the interface, forming an extra Sr-rich sub-nanometer layer. The structure of the fault and the lattice behavior in the interface area were characterized on an atomic scale by properly imaging all types of atomic columns, especially the pure oxygen columns, by means of spherical-aberration-corrected high-resolution transmission electron microscopy. Information on local interdiffusion and lattice strain at the interface was obtained by quantitative evaluation of the atomic resolution images.' (C) 2002 Elsevier Science B.V. All rights reserved. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 536 | _ | _ | |a Kondensierte Materie |c M02 |0 G:(DE-Juel1)FUEK242 |x 1 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a high resolution transmission electron microscopy |
| 653 | 2 | 0 | |2 Author |a interfaces |
| 653 | 2 | 0 | |2 Author |a Ruddlesden-Popper-Type planar fault |
| 653 | 2 | 0 | |2 Author |a SrRuO3/BaTiO3 heterofilm |
| 653 | 2 | 0 | |2 Author |a perovskites |
| 700 | 1 | _ | |a Rodriguez Contreras, J. |b 1 |u FZJ |0 P:(DE-Juel1)VDB5562 |
| 700 | 1 | _ | |a Schubert, J. |b 2 |u FZJ |0 P:(DE-Juel1)128631 |
| 700 | 1 | _ | |a Lentzen, M. |b 3 |u FZJ |0 P:(DE-Juel1)VDB5034 |
| 700 | 1 | _ | |a Poppe, U. |b 4 |u FZJ |0 P:(DE-Juel1)VDB21377 |
| 700 | 1 | _ | |a Kohlstedt, H. |b 5 |u FZJ |0 P:(DE-Juel1)VDB3107 |
| 700 | 1 | _ | |a Urban, K. |b 6 |u FZJ |0 P:(DE-Juel1)VDB4950 |
| 700 | 1 | _ | |a Waser, R. |b 7 |u FZJ |0 P:(DE-Juel1)131022 |
| 773 | _ | _ | |a 10.1016/S0022-0248(02)01985-1 |g Vol. 247, p. 381 |p 381 |q 247<381 |0 PERI:(DE-600)1466514-1 |t Journal of crystal growth |v 247 |y 2003 |x 0022-0248 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/S0022-0248(02)01985-1 |
| 909 | C | O | |o oai:juser.fz-juelich.de:30093 |p VDB |
| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 913 | 1 | _ | |k M02 |v Kondensierte Materie |l Kondensierte Materie |b Materie |0 G:(DE-Juel1)FUEK242 |x 1 |
| 914 | 1 | _ | |y 2003 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |k IFF-EKM |l Elektrokeramische Materialien |d 31.12.2003 |g IFF |0 I:(DE-Juel1)VDB35 |x 0 |
| 920 | 1 | _ | |k IFF-IMF |l Mikrostrukturforschung |d 31.12.2006 |g IFF |0 I:(DE-Juel1)VDB37 |x 1 |
| 920 | 1 | _ | |k ISG-1 |l Institut für Halbleiterschichten und Bauelemente |d 31.12.2006 |g ISG |0 I:(DE-Juel1)VDB41 |x 2 |
| 970 | _ | _ | |a VDB:(DE-Juel1)27524 |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a ConvertedRecord |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-5-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)ER-C-1-20170209 |
| 981 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
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| 981 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
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