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001     30191
005     20200423203516.0
017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1544649
|2 DOI
024 7 _ |a WOS:000181307000091
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024 7 _ |a 2128/1233
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037 _ _ |a PreJuSER-30191
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Bolten, D.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Frequency and temperature dependence of the relative permittivity in ferroelectrics: Monte-Carlo simulation study
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2003
300 _ _ |a 2890 - 2894
336 7 _ |a Journal Article
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336 7 _ |a Journal Article
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336 7 _ |a ARTICLE
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336 7 _ |a article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
|0 3051
|v 93
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In this article, the domain wall densities calculated from simulated domain configurations are used to estimate the domain wall contributions to the dielectric permittivity of a ferroelectric material. The configurations were calculated using a Monte-Carlo model proposed by B. G. Potter et al. [J. Appl. Phys. 87, 4415 (2000)]. The temperature and frequency dependence of the contributions are analyzed and compared to experimental results obtained on PbZrxTi1-xO3 thin films. (C) 2003 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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700 1 _ |a Böttger, U.
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700 1 _ |a Waser, R.
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773 _ _ |a 10.1063/1.1544649
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856 7 _ |u http://dx.doi.org/10.1063/1.1544649
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