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@ARTICLE{Roelofs:30192,
      author       = {Roelofs, A. and Schneller, T. and Szot, K. and Waser, R.},
      title        = {{T}owards the limit of ferroelectric nanosized grains},
      journal      = {Nanotechnology},
      volume       = {14},
      issn         = {0957-4484},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {PreJuSER-30192},
      pages        = {250 - 253},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Ferroelectric random access memories are non-volatile, low
                      voltage, high read/write speed devices which have been
                      introduced into the market in recent years and which show
                      the clear potential of future gigabit scale universal
                      non-volatile memories. The ultimate limit of this concept
                      will depend on the ferroelectric limit (synonymous
                      superparaelectric limit), i.e. the size limit below which
                      the ferroelectricity is quenched. While there are clear
                      indications that 2D ferroelectric oxide films may sustain
                      their ferroelectric polarization below 4 nm in thickness
                      (Tybell T, Ahn C H and Triscone J M 1999 Appl. Phys. Lett.
                      75 856), the limit will be quite different for isolated 3D
                      nanostructures (nanograins, nanoclusters).To investigate
                      scaling effects of ferroelectric nanograins on Si wafers, we
                      studied PbTiO3 (PTO) and Pb(ZrxTi1-x)O-3 grown by a
                      self-assembly chemical solution deposition method. Preparing
                      highly diluted precursor solutions we achieved single
                      separated ferroelectric grains with grain sizes ranging from
                      200 nm down to less than 20 nm.For grains smaller than 20
                      nm, no piezoresponse was observed and we suppose this could
                      be due to the transition from the ferroelectric to the
                      paraelectric phase which has no spontaneous polarization.
                      Recent calculations (Zhong W L, Wang Y G, Zhang P L and Qu B
                      D 1994 Phys. Rev. B 50 698) and experiments (Jiang B, Peng J
                      L, Zhong W L and Bursill L A 2000 J. Appl. Phys. 87 3462)
                      showed that the ferroelectricity of fine ferroelectric
                      particles decrease with decreasing particle size. From these
                      experiments the extrapolated critical size of PTO particles
                      was found to be around 4.2-20 nm.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Nanoscience $\&$ Nanotechnology / Materials Science,
                      Multidisciplinary / Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181624100029},
      doi          = {10.1088/0957-4484/14/2/328},
      url          = {https://juser.fz-juelich.de/record/30192},
}