000030220 001__ 30220
000030220 005__ 20240610121315.0
000030220 0247_ $$2DOI$$a10.1016/j.jcrysgro.2003.10.026
000030220 0247_ $$2WOS$$aWOS:000189098700045
000030220 037__ $$aPreJuSER-30220
000030220 041__ $$aeng
000030220 082__ $$a540
000030220 084__ $$2WoS$$aCrystallography
000030220 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000030220 084__ $$2WoS$$aPhysics, Applied
000030220 1001_ $$0P:(DE-HGF)0$$aHe, J. Q.$$b0
000030220 245__ $$aMicrostructure and interfaces of HfO2 thin films grown on silicon substrates
000030220 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2004
000030220 300__ $$a295 - 303
000030220 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000030220 3367_ $$2DataCite$$aOutput Types/Journal article
000030220 3367_ $$00$$2EndNote$$aJournal Article
000030220 3367_ $$2BibTeX$$aARTICLE
000030220 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000030220 3367_ $$2DRIVER$$aarticle
000030220 440_0 $$03235$$aJournal of Crystal Growth$$v262$$x0022-0248
000030220 500__ $$aRecord converted from VDB: 12.11.2012
000030220 520__ $$aThe microstructure and the interfaces of HfO2 films deposited by metal-organic chemical vapor deposition directly on silicon (0 0 1) substrates were investigated by means of transmission electron microscopy. For two different precursors, Hf(O-i-but)O-2(mmp)(2) and Hf(diethyl-amide)(4), electron diffraction analysis showed a gradual transformation from the amorphous phase to the monoclinic phase in the deposition temperature range of 350-600degreesC. At an intermediate substrate temperature, 550degreesC, a small amount of tetragonal second phase was additionally observed. For the two types of precursors, the thickness of the interfacial amorphous layer was found to depend on the deposition temperature and showed a major decrease along with the amorphous to crystalline transition of the films. The influence of the substrate surface preparation and of post deposition annealing on the thickness of the interfacial layer is also discussed. (C) 2003 Elsevier B.V. All rights reserved.
000030220 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000030220 536__ $$0G:(DE-Juel1)FUEK242$$aKondensierte Materie$$cM02$$x1
000030220 588__ $$aDataset connected to Web of Science
000030220 650_7 $$2WoSType$$aJ
000030220 65320 $$2Author$$ainterfacial layers
000030220 65320 $$2Author$$atransmission electron microscopy
000030220 65320 $$2Author$$athin films
000030220 65320 $$2Author$$aHfO2
000030220 65320 $$2Author$$agate oxide
000030220 7001_ $$0P:(DE-HGF)0$$aTeren, A.$$b1
000030220 7001_ $$0P:(DE-Juel1)VDB5020$$aJia, C. L.$$b2$$uFZJ
000030220 7001_ $$0P:(DE-Juel1)VDB22206$$aErhart, P.$$b3$$uFZJ
000030220 7001_ $$0P:(DE-Juel1)VDB4950$$aUrban, K.$$b4$$uFZJ
000030220 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
000030220 7001_ $$0P:(DE-HGF)0$$aWang, R. H.$$b6
000030220 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2003.10.026$$gVol. 262, p. 295 - 303$$p295 - 303$$q262<295 - 303$$tJournal of crystal growth$$v262$$x0022-0248$$y2004
000030220 8567_ $$uhttp://dx.doi.org/10.1016/j.jcrysgro.2003.10.026
000030220 909CO $$ooai:juser.fz-juelich.de:30220$$pVDB
000030220 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000030220 9131_ $$0G:(DE-Juel1)FUEK242$$bMaterie$$kM02$$lKondensierte Materie$$vKondensierte Materie$$x1
000030220 9141_ $$y2004
000030220 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000030220 9201_ $$0I:(DE-Juel1)VDB321$$d31.12.2006$$gIFF$$kIFF-IEM$$lElektronische Materialien$$x1
000030220 9201_ $$0I:(DE-Juel1)VDB37$$d31.12.2006$$gIFF$$kIFF-IMF$$lMikrostrukturforschung$$x0
000030220 9201_ $$0I:(DE-Juel1)VDB381$$d14.09.2008$$gCNI$$kCNI$$lCenter of Nanoelectronic Systems for Information Technology$$x2$$z381
000030220 970__ $$aVDB:(DE-Juel1)27731
000030220 980__ $$aVDB
000030220 980__ $$aConvertedRecord
000030220 980__ $$ajournal
000030220 980__ $$aI:(DE-Juel1)PGI-7-20110106
000030220 980__ $$aI:(DE-Juel1)PGI-5-20110106
000030220 980__ $$aI:(DE-Juel1)VDB381
000030220 980__ $$aUNRESTRICTED
000030220 981__ $$aI:(DE-Juel1)ER-C-1-20170209
000030220 981__ $$aI:(DE-Juel1)PGI-7-20110106
000030220 981__ $$aI:(DE-Juel1)PGI-5-20110106
000030220 981__ $$aI:(DE-Juel1)VDB381