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@ARTICLE{He:30220,
      author       = {He, J. Q. and Teren, A. and Jia, C. L. and Erhart, P. and
                      Urban, K. and Waser, R. and Wang, R. H.},
      title        = {{M}icrostructure and interfaces of {H}f{O}2 thin films
                      grown on silicon substrates},
      journal      = {Journal of crystal growth},
      volume       = {262},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-30220},
      pages        = {295 - 303},
      year         = {2004},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The microstructure and the interfaces of HfO2 films
                      deposited by metal-organic chemical vapor deposition
                      directly on silicon (0 0 1) substrates were investigated by
                      means of transmission electron microscopy. For two different
                      precursors, Hf(O-i-but)O-2(mmp)(2) and Hf(diethyl-amide)(4),
                      electron diffraction analysis showed a gradual
                      transformation from the amorphous phase to the monoclinic
                      phase in the deposition temperature range of
                      350-600degreesC. At an intermediate substrate temperature,
                      550degreesC, a small amount of tetragonal second phase was
                      additionally observed. For the two types of precursors, the
                      thickness of the interfacial amorphous layer was found to
                      depend on the deposition temperature and showed a major
                      decrease along with the amorphous to crystalline transition
                      of the films. The influence of the substrate surface
                      preparation and of post deposition annealing on the
                      thickness of the interfacial layer is also discussed. (C)
                      2003 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IFF-IEM / IFF-IMF / CNI},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB321 / I:(DE-Juel1)VDB37 /
                      I:(DE-Juel1)VDB381},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik / Kondensierte Materie},
      pid          = {G:(DE-Juel1)FUEK252 / G:(DE-Juel1)FUEK242},
      shelfmark    = {Crystallography / Materials Science, Multidisciplinary /
                      Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000189098700045},
      doi          = {10.1016/j.jcrysgro.2003.10.026},
      url          = {https://juser.fz-juelich.de/record/30220},
}