%0 Journal Article
%A Thon, A.
%A Merschdorf, M.
%A Pfeiffer, W.
%A Klamroth, T.
%A Saalfrank, P.
%A Diesing, D.
%T Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions
%J Applied physics / A
%V 78
%@ 0947-8396
%C Berlin
%I Springer
%M PreJuSER-30244
%P 189 - 199
%D 2003
%Z Record converted from VDB: 12.11.2012
%X Photocurrent measurements in Ag-Al2O3-Al metal-insulator-metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that depend critically on the preparation of the interface. The comparison of time-resolved two-pulse correlation measurements with model calculations shows that the photon-induced transport of excited electrons is well described using a one-dimensional many-particle model for two coupled metallic leads, whereas a single-particle model for nonresonant excitation in a rectangular double-minimum potential reveals the signature of photon-assisted tunneling.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000186497500010
%R 10.1007/s00339-003-2314-2
%U https://juser.fz-juelich.de/record/30244