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024 7 _ |2 DOI
|a 10.1007/s00339-003-2314-2
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037 _ _ |a PreJuSER-30244
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Materials Science, Multidisciplinary
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Thon, A.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Photon-assisted tunneling versus tunneling of excited electrons in metal-insulator-metal junctions
260 _ _ |c 2003
|a Berlin
|b Springer
300 _ _ |a 189 - 199
336 7 _ |a Journal Article
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440 _ 0 |a Applied Physics A
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|v 78
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Photocurrent measurements in Ag-Al2O3-Al metal-insulator-metal junctions under illumination with ultra-short laser pulses reveal that tunneling and internal photoemission of excited electrons are the dominating transport mechanisms. Photon-assisted tunneling is observed under rare conditions that depend critically on the preparation of the interface. The comparison of time-resolved two-pulse correlation measurements with model calculations shows that the photon-induced transport of excited electrons is well described using a one-dimensional many-particle model for two coupled metallic leads, whereas a single-particle model for nonresonant excitation in a rectangular double-minimum potential reveals the signature of photon-assisted tunneling.
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700 1 _ |a Merschdorf, M.
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700 1 _ |a Pfeiffer, W.
|b 2
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700 1 _ |a Klamroth, T.
|b 3
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700 1 _ |a Saalfrank, P.
|b 4
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700 1 _ |a Diesing, D.
|b 5
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|a 10.1007/s00339-003-2314-2
|g Vol. 78, p. 189 - 199
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|t Applied physics / A
|v 78
|x 0947-8396
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856 7 _ |u http://dx.doi.org/10.1007/s00339-003-2314-2
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