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000030883 084__ $$2WoS$$aPhysics, Applied
000030883 1001_ $$0P:(DE-Juel1)132261$$aSchuller, B.$$b0$$uFZJ
000030883 245__ $$aOptical and structural properties of ß-FeSi2 precipitate layers in silicon
000030883 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2003
000030883 300__ $$a207 - 211
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000030883 440_0 $$03051$$aJournal of Applied Physics$$v94$$x0021-8979$$y1
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000030883 520__ $$aSemiconducting iron disilicide (beta-FeSi2) precipitates in silicon were fabricated by ion beam synthesis. The samples were characterized by Raman spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. By comparison with a beta-FeSi2 single crystal, the silicide precipitates are found to be unstrained in all cases, so there is no correlation between strain and photoluminescence efficiency. Our results indicate that carrier recombination at silicon dislocations is sufficient to explain the photoluminescence in our samples. (C) 2003 American Institute of Physics.
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000030883 7001_ $$0P:(DE-Juel1)VDB4964$$aCarius, R.$$b1$$uFZJ
000030883 7001_ $$0P:(DE-Juel1)VDB4959$$aMantl, S.$$b2$$uFZJ
000030883 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.1576902$$gVol. 94, p. 207 - 211$$p207 - 211$$q94<207 - 211$$tJournal of applied physics$$v94$$x0021-8979$$y2003
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