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@ARTICLE{Schuller:30883,
      author       = {Schuller, B. and Carius, R. and Mantl, S.},
      title        = {{O}ptical and structural properties of ß-{F}e{S}i2
                      precipitate layers in silicon},
      journal      = {Journal of applied physics},
      volume       = {94},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-30883},
      pages        = {207 - 211},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Semiconducting iron disilicide (beta-FeSi2) precipitates in
                      silicon were fabricated by ion beam synthesis. The samples
                      were characterized by Raman spectroscopy, transmission
                      electron microscopy, and photoluminescence spectroscopy. By
                      comparison with a beta-FeSi2 single crystal, the silicide
                      precipitates are found to be unstrained in all cases, so
                      there is no correlation between strain and photoluminescence
                      efficiency. Our results indicate that carrier recombination
                      at silicon dislocations is sufficient to explain the
                      photoluminescence in our samples. (C) 2003 American
                      Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {ISG-1 / IPV},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB46},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik / Photovoltaik},
      pid          = {G:(DE-Juel1)FUEK252 / G:(DE-Juel1)FUEK247},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000183642900026},
      doi          = {10.1063/1.1576902},
      url          = {https://juser.fz-juelich.de/record/30883},
}