% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Schuller:30883,
author = {Schuller, B. and Carius, R. and Mantl, S.},
title = {{O}ptical and structural properties of ß-{F}e{S}i2
precipitate layers in silicon},
journal = {Journal of applied physics},
volume = {94},
issn = {0021-8979},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-30883},
pages = {207 - 211},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {Semiconducting iron disilicide (beta-FeSi2) precipitates in
silicon were fabricated by ion beam synthesis. The samples
were characterized by Raman spectroscopy, transmission
electron microscopy, and photoluminescence spectroscopy. By
comparison with a beta-FeSi2 single crystal, the silicide
precipitates are found to be unstrained in all cases, so
there is no correlation between strain and photoluminescence
efficiency. Our results indicate that carrier recombination
at silicon dislocations is sufficient to explain the
photoluminescence in our samples. (C) 2003 American
Institute of Physics.},
keywords = {J (WoSType)},
cin = {ISG-1 / IPV},
ddc = {530},
cid = {I:(DE-Juel1)VDB41 / I:(DE-Juel1)VDB46},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik / Photovoltaik},
pid = {G:(DE-Juel1)FUEK252 / G:(DE-Juel1)FUEK247},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000183642900026},
doi = {10.1063/1.1576902},
url = {https://juser.fz-juelich.de/record/30883},
}