Hauptseite > Publikationsdatenbank > Optical and structural properties of ß-FeSi2 precipitate layers in silicon > print

001     30883
005     20240712084529.0
017 _ _ |a This version is available at the following Publisher URL: http://jap.aip.org
024 7 _ |a 10.1063/1.1576902
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024 7 _ |a WOS:000183642900026
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024 7 _ |a 2128/1966
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041 _ _ |a eng
082 _ _ |a 530
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|a Physics, Applied
100 1 _ |a Schuller, B.
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245 _ _ |a Optical and structural properties of ß-FeSi2 precipitate layers in silicon
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2003
300 _ _ |a 207 - 211
336 7 _ |a Journal Article
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440 _ 0 |a Journal of Applied Physics
|x 0021-8979
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|v 94
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Semiconducting iron disilicide (beta-FeSi2) precipitates in silicon were fabricated by ion beam synthesis. The samples were characterized by Raman spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. By comparison with a beta-FeSi2 single crystal, the silicide precipitates are found to be unstrained in all cases, so there is no correlation between strain and photoluminescence efficiency. Our results indicate that carrier recombination at silicon dislocations is sufficient to explain the photoluminescence in our samples. (C) 2003 American Institute of Physics.
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700 1 _ |a Carius, R.
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700 1 _ |a Mantl, S.
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773 _ _ |a 10.1063/1.1576902
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856 7 _ |u http://dx.doi.org/10.1063/1.1576902
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