%0 Journal Article
%A Cherepanov, V.
%A Voigtländer, B.
%T Growth of Ag on the Bi-terminated Ge/Si(111) surface
%J Surface science
%V 602
%@ 0039-6028
%C Amsterdam
%I Elsevier
%M PreJuSER-312
%P 1954 - 1956
%D 2008
%Z Record converted from VDB: 12.11.2012
%X The presence of a Bi layer during Ge epitaxy at the Si(1 11) surface suppresses Si-Ge intermixing and also allows us to distinguish between Si and Ge in scanning tunneling microscopy at the atomic level. In our investigation, we explored the possibility of a selective growth of Ag either on a Ge area or a Si area. We found that a chemically selective bonding of Ag to Si or Ge at the prestructured Ge/Si surface does not occur. Due to the strong passivation of Si and of the Ge surfaces by a layer of Bi at room and elevated temperatures Ag collects into 3D islands without being incorporated into the surface. Co-deposition of Ag during the epitaxy of Ge on the Bi-terminated Si(1 11) surface also leads to an accumulation of Ag into 3D islands, while the remaining surface is covered by a layer of Bi. (c) 2008 Elsevier B.V. All rights reserved.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000256980200007
%R 10.1016/j.susc.2008.03.045
%U https://juser.fz-juelich.de/record/312