TY  - JOUR
AU  - Cherepanov, V.
AU  - Voigtländer, B.
TI  - Growth of Ag on the Bi-terminated Ge/Si(111) surface
JO  - Surface science
VL  - 602
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-312
SP  - 1954 - 1956
PY  - 2008
N1  - Record converted from VDB: 12.11.2012
AB  - The presence of a Bi layer during Ge epitaxy at the Si(1 11) surface suppresses Si-Ge intermixing and also allows us to distinguish between Si and Ge in scanning tunneling microscopy at the atomic level. In our investigation, we explored the possibility of a selective growth of Ag either on a Ge area or a Si area. We found that a chemically selective bonding of Ag to Si or Ge at the prestructured Ge/Si surface does not occur. Due to the strong passivation of Si and of the Ge surfaces by a layer of Bi at room and elevated temperatures Ag collects into 3D islands without being incorporated into the surface. Co-deposition of Ag during the epitaxy of Ge on the Bi-terminated Si(1 11) surface also leads to an accumulation of Ag into 3D islands, while the remaining surface is covered by a layer of Bi. (c) 2008 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000256980200007
DO  - DOI:10.1016/j.susc.2008.03.045
UR  - https://juser.fz-juelich.de/record/312
ER  -