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@ARTICLE{Cherepanov:312,
      author       = {Cherepanov, V. and Voigtländer, B.},
      title        = {{G}rowth of {A}g on the {B}i-terminated {G}e/{S}i(111)
                      surface},
      journal      = {Surface science},
      volume       = {602},
      issn         = {0039-6028},
      address      = {Amsterdam},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-312},
      pages        = {1954 - 1956},
      year         = {2008},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The presence of a Bi layer during Ge epitaxy at the Si(1
                      11) surface suppresses Si-Ge intermixing and also allows us
                      to distinguish between Si and Ge in scanning tunneling
                      microscopy at the atomic level. In our investigation, we
                      explored the possibility of a selective growth of Ag either
                      on a Ge area or a Si area. We found that a chemically
                      selective bonding of Ag to Si or Ge at the prestructured
                      Ge/Si surface does not occur. Due to the strong passivation
                      of Si and of the Ge surfaces by a layer of Bi at room and
                      elevated temperatures Ag collects into 3D islands without
                      being incorporated into the surface. Co-deposition of Ag
                      during the epitaxy of Ge on the Bi-terminated Si(1 11)
                      surface also leads to an accumulation of Ag into 3D islands,
                      while the remaining surface is covered by a layer of Bi. (c)
                      2008 Elsevier B.V. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {IBN-3 / CNI / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB801 / I:(DE-Juel1)VDB381 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Chemistry, Physical / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000256980200007},
      doi          = {10.1016/j.susc.2008.03.045},
      url          = {https://juser.fz-juelich.de/record/312},
}