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| Hauptseite > Publikationsdatenbank > Growth of Ag on the Bi-terminated Ge/Si(111) surface > print |
| 001 | 312 | ||
| 005 | 20180208195651.0 | ||
| 024 | 7 | _ | |2 DOI |a 10.1016/j.susc.2008.03.045 |
| 024 | 7 | _ | |2 WOS |a WOS:000256980200007 |
| 037 | _ | _ | |a PreJuSER-312 |
| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 540 |
| 084 | _ | _ | |2 WoS |a Chemistry, Physical |
| 084 | _ | _ | |2 WoS |a Physics, Condensed Matter |
| 100 | 1 | _ | |a Cherepanov, V. |b 0 |u FZJ |0 P:(DE-Juel1)VDB10516 |
| 245 | _ | _ | |a Growth of Ag on the Bi-terminated Ge/Si(111) surface |
| 260 | _ | _ | |a Amsterdam |b Elsevier |c 2008 |
| 300 | _ | _ | |a 1954 - 1956 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Surface Science |x 0039-6028 |0 5673 |v 602 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The presence of a Bi layer during Ge epitaxy at the Si(1 11) surface suppresses Si-Ge intermixing and also allows us to distinguish between Si and Ge in scanning tunneling microscopy at the atomic level. In our investigation, we explored the possibility of a selective growth of Ag either on a Ge area or a Si area. We found that a chemically selective bonding of Ag to Si or Ge at the prestructured Ge/Si surface does not occur. Due to the strong passivation of Si and of the Ge surfaces by a layer of Bi at room and elevated temperatures Ag collects into 3D islands without being incorporated into the surface. Co-deposition of Ag during the epitaxy of Ge on the Bi-terminated Si(1 11) surface also leads to an accumulation of Ag into 3D islands, while the remaining surface is covered by a layer of Bi. (c) 2008 Elsevier B.V. All rights reserved. |
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| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 653 | 2 | 0 | |2 Author |a scanning tunneling microscopy |
| 653 | 2 | 0 | |2 Author |a molecular beam epitaxy |
| 653 | 2 | 0 | |2 Author |a bismuth |
| 653 | 2 | 0 | |2 Author |a silver |
| 653 | 2 | 0 | |2 Author |a silicon |
| 653 | 2 | 0 | |2 Author |a germanium |
| 653 | 2 | 0 | |2 Author |a nucleation |
| 653 | 2 | 0 | |2 Author |a growth |
| 700 | 1 | _ | |a Voigtländer, B. |b 1 |u FZJ |0 P:(DE-Juel1)VDB5601 |
| 773 | _ | _ | |a 10.1016/j.susc.2008.03.045 |g Vol. 602, p. 1954 - 1956 |p 1954 - 1956 |q 602<1954 - 1956 |0 PERI:(DE-600)1479030-0 |t Surface science |v 602 |y 2008 |x 0039-6028 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1016/j.susc.2008.03.045 |
| 909 | C | O | |o oai:juser.fz-juelich.de:312 |p VDB |
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| 914 | 1 | _ | |y 2008 |
| 915 | _ | _ | |0 StatID:(DE-HGF)0010 |a JCR/ISI refereed |
| 920 | 1 | _ | |d 31.12.2010 |g IBN |k IBN-3 |l Grenz- und Oberflächen |0 I:(DE-Juel1)VDB801 |x 0 |
| 920 | 1 | _ | |d 14.09.2008 |g CNI |k CNI |l Center of Nanoelectronic Systems for Information Technology |0 I:(DE-Juel1)VDB381 |x 1 |z 381 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology |g JARA |x 2 |
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| 980 | _ | _ | |a journal |
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