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@ARTICLE{Hartner:31595,
author = {Hartner, W. and Bosk, P. and Schindler, G. and Bachhofer,
H. and Mört, M. and Wendt, H. and Mikolajick, D. A. B. and
Dehm, C. and Schroeder, H. and Waser, R.},
title = {{S}r{B}i 2{T}a 2{O} 9 ferroelectric thin film capacitors:
degradation in a hydrogen ambient},
journal = {Applied physics / A},
volume = {77},
issn = {0947-8396},
address = {Berlin},
publisher = {Springer},
reportid = {PreJuSER-31595},
pages = {571 - 579},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {The effects of annealing in forming gas $5\%$ hydrogen,
$95\%$ nitrogen; FGA) are studied on spin-coated SrBi2Ta2O9
(SBT) thin films. SBT films on a platinum bottom electrode
are characterized with and without a platinum top electrode.
Films are characterized by residual stress measurements,
scanning electron microscopy (SEM), Auger electron
spectroscopy (AES), high-temperature X-ray diffraction
(HT-XRD) and secondary ion mass spectrometry (SIMS). To
determine the degree of strain, lattice constants of Pt are
measured by X-ray diffraction (XRD). HT-XRD of blanket
SBT/Pt/Ti films in forming gas revealed that the
bismuth-layered perovskite structure of SBT is stable up to
approximately 500 degreesC. After formation of an
intermediate phase between 550 degreesC and 700 degreesC,
SBT changes its structure to an amorphous phase. SIMS
analysis of Pt/SBT/Pt samples annealed in deuterated forming
gas $(5\%$ D-2, $95\%$ N-2) showed that hydrogen accumulates
in the SBT layer and at the platinum interfaces next to the
SBT. After FGA of blanket SBT films, tall platinum-bismuth
whiskers are seen on the SBT surface. It is confirmed that
these whiskers originate from the platinum bottom electrode
and grow through the SBT layer. FGA of the entire
Pt/SBT/Pt/Ti stack shows two different results. For the
samples with a high-temperature annealing (HTA) step in
oxygen after top electrode patterning, peeling of the top
electrode is observed after FGA. For the samples without a
HTA step, no peeling is observed after FGA. The residual
stress at room temperature is measured for blanket platinum
wafers deposited at different temperatures. It is found that
an increase in tensile stress caused by the HTA step in
oxygen is followed by a decrease in stress caused by the
hydrogen in the forming gas. Without HTA, however, an
increase of stress is observed after FGA.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {530},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Materials Science, Multidisciplinary / Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000184296000037},
doi = {10.1007/s00339-002-1500-y},
url = {https://juser.fz-juelich.de/record/31595},
}