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@ARTICLE{Bolten:31693,
      author       = {Bolten, D. and Böttger, U. and Waser, R.},
      title        = {{I}nfluence of defects on the properties of a 2{D}
                      ferroelectric: {A} {M}onte-{C}arlo simulation study},
      journal      = {Japanese journal of applied physics},
      volume       = {41},
      issn         = {0021-4922},
      address      = {Tokyo},
      publisher    = {Inst. of Pure and Applied Physics},
      reportid     = {PreJuSER-31693},
      pages        = {7202 - 7210},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In this article, Monte-Carlo simulation methods were used
                      to investigate the influence of different types of defects
                      on the properties of a 2-dimensional ferroelectric. To this
                      end, a recently published model by B. G. Potter et al. [J.
                      Appl. Phys. 87 (2000) 4415] was extended to include simple
                      defects. The effect of these defects on the hysteresis
                      curves was analyzed. The interaction of a single domain wall
                      with a defect cluster was also investigated with this model.
                      Furthermore, the simulation could be used to verify the
                      dependence of the Rayleigh constant on the defect
                      concentration, predicted by Boser [J. Appl. Phys. 62
                      (1987),1344] theoretically and recently found to be valid
                      for donor-doped lead zirconate titanate (PZT) thin films
                      [Bolten et al., Appl. Phys. Lett. 77 (2000) 3830]. The
                      simulation provided evidence for the existence of a
                      defect-driven relaxation process in ferroelectrics similar
                      to the relaxation found in heavily disturbed systems.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000182730300131},
      doi          = {10.1143/JJAP.41.7202},
      url          = {https://juser.fz-juelich.de/record/31693},
}