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000031694 0247_ $$2DOI$$a10.1063/1.1452783
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000031694 084__ $$2WoS$$aPhysics, Applied
000031694 1001_ $$0P:(DE-HGF)0$$aGrossmann, M.$$b0
000031694 245__ $$aInterface-related decrease of the permittivity in PbZrxTi1-xO3 thin films
000031694 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2002
000031694 300__ $$a1427 - 1429
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000031694 440_0 $$0562$$aApplied Physics Letters$$v85$$x0003-6951
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000031694 520__ $$aIn ferroelectric thin films, a decrease of the permittivity is observed obeying a logarithmic time dependence, In the literature, a similar effect has been reported for ferroelectric single crystals and ceramics, which is referred to as ferroelectric aging, and different models have been proposed to explain this phenomenon. In this letter, ferroelectric aging of PbZrxTi1-xO3 thin films is studied as a function of dopant types and concentrations as well as the temperature. The results clearly show that the traditional models for the aging mechanism of ferroelectric single crystals and ceramics are not applicable. Based on these results, a mechanism is proposed which explains the decrease of the dielectric constant in ferroelectric thin films by the growth of a thin surface layer with suppressed ferroelectric properties in the course of aging. (C) 2002 American Institute of Physics.
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000031694 7001_ $$0P:(DE-HGF)0$$aLohse, O.$$b1
000031694 7001_ $$0P:(DE-HGF)0$$aBolten, D.$$b2
000031694 7001_ $$0P:(DE-HGF)0$$aBöttger, U.$$b3
000031694 7001_ $$0P:(DE-HGF)0$$aSchneller, T.$$b4
000031694 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$uFZJ
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