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@ARTICLE{Grossmann:31694,
      author       = {Grossmann, M. and Lohse, O. and Bolten, D. and Böttger, U.
                      and Schneller, T. and Waser, R.},
      title        = {{I}nterface-related decrease of the permittivity in
                      {P}b{Z}rx{T}i1-x{O}3 thin films},
      journal      = {Applied physics letters},
      volume       = {80},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-31694},
      pages        = {1427 - 1429},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {In ferroelectric thin films, a decrease of the permittivity
                      is observed obeying a logarithmic time dependence, In the
                      literature, a similar effect has been reported for
                      ferroelectric single crystals and ceramics, which is
                      referred to as ferroelectric aging, and different models
                      have been proposed to explain this phenomenon. In this
                      letter, ferroelectric aging of PbZrxTi1-xO3 thin films is
                      studied as a function of dopant types and concentrations as
                      well as the temperature. The results clearly show that the
                      traditional models for the aging mechanism of ferroelectric
                      single crystals and ceramics are not applicable. Based on
                      these results, a mechanism is proposed which explains the
                      decrease of the dielectric constant in ferroelectric thin
                      films by the growth of a thin surface layer with suppressed
                      ferroelectric properties in the course of aging. (C) 2002
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000174009800037},
      doi          = {10.1063/1.1452783},
      url          = {https://juser.fz-juelich.de/record/31694},
}