001     31694
005     20200423203540.0
017 _ _ |a This version is available at the following Publisher URL: http://apl.aip.org
024 7 _ |a 10.1063/1.1452783
|2 DOI
024 7 _ |a WOS:000174009800037
|2 WOS
024 7 _ |a 2128/1236
|2 Handle
037 _ _ |a PreJuSER-31694
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |a Grossmann, M.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Interface-related decrease of the permittivity in PbZrxTi1-xO3 thin films
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2002
300 _ _ |a 1427 - 1429
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Applied Physics Letters
|x 0003-6951
|0 562
|v 85
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a In ferroelectric thin films, a decrease of the permittivity is observed obeying a logarithmic time dependence, In the literature, a similar effect has been reported for ferroelectric single crystals and ceramics, which is referred to as ferroelectric aging, and different models have been proposed to explain this phenomenon. In this letter, ferroelectric aging of PbZrxTi1-xO3 thin films is studied as a function of dopant types and concentrations as well as the temperature. The results clearly show that the traditional models for the aging mechanism of ferroelectric single crystals and ceramics are not applicable. Based on these results, a mechanism is proposed which explains the decrease of the dielectric constant in ferroelectric thin films by the growth of a thin surface layer with suppressed ferroelectric properties in the course of aging. (C) 2002 American Institute of Physics.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
700 1 _ |a Lohse, O.
|b 1
|0 P:(DE-HGF)0
700 1 _ |a Bolten, D.
|b 2
|0 P:(DE-HGF)0
700 1 _ |a Böttger, U.
|b 3
|0 P:(DE-HGF)0
700 1 _ |a Schneller, T.
|b 4
|0 P:(DE-HGF)0
700 1 _ |a Waser, R.
|b 5
|u FZJ
|0 P:(DE-Juel1)131022
773 _ _ |a 10.1063/1.1452783
|g Vol. 80, p. 1427 - 1429
|p 1427 - 1429
|q 80<1427 - 1429
|0 PERI:(DE-600)1469436-0
|t Applied physics letters
|v 80
|y 2002
|x 0003-6951
856 4 _ |u https://juser.fz-juelich.de/record/31694/files/33392.pdf
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/31694/files/33392.jpg?subformat=icon-1440
|x icon-1440
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/31694/files/33392.jpg?subformat=icon-180
|x icon-180
|y OpenAccess
856 4 _ |u https://juser.fz-juelich.de/record/31694/files/33392.jpg?subformat=icon-640
|x icon-640
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:31694
|p openaire
|p open_access
|p driver
|p VDB
|p dnbdelivery
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |a Nachtrag
|y 2002
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
915 _ _ |2 StatID
|0 StatID:(DE-HGF)0510
|a OpenAccess
920 1 _ |k IFF-EKM
|l Elektrokeramische Materialien
|d 31.12.2003
|g IFF
|0 I:(DE-Juel1)VDB35
|x 0
970 _ _ |a VDB:(DE-Juel1)33392
980 _ _ |a VDB
980 _ _ |a JUWEL
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a UNRESTRICTED
980 _ _ |a FullTexts
980 1 _ |a FullTexts
981 _ _ |a I:(DE-Juel1)PGI-7-20110106


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21