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000032025 084__ $$2WoS$$aMaterials Science, Ceramics
000032025 1001_ $$0P:(DE-Juel1)VDB3071$$aRegnery, S.$$b0$$uFZJ
000032025 245__ $$a(Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor
000032025 260__ $$aAmsterdam [u.a.]$$bElsevier Science$$c2003
000032025 300__ $$a271-276
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000032025 440_0 $$03891$$aJournal of the European Ceramic Society$$v24$$x0955-2219$$y2
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000032025 520__ $$aThin films of different compositions within the (Ba-x,Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)(2), Ba(thd)(2) and Ti(O-i-Pr)(2)(thd)(2) precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
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000032025 65320 $$2Author$$aBaTiO3 and titanates
000032025 65320 $$2Author$$acapacitors
000032025 65320 $$2Author$$adielectric properties
000032025 65320 $$2Author$$aelectron microscopy
000032025 65320 $$2Author$$athin films
000032025 7001_ $$0P:(DE-Juel1)VDB3072$$aEhrhart, P.$$b1$$uFZJ
000032025 7001_ $$0P:(DE-Juel1)VDB3070$$aFitsilis, F.$$b2$$uFZJ
000032025 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000032025 7001_ $$0P:(DE-Juel1)VDB15124$$aDing, Y.$$b4$$uFZJ
000032025 7001_ $$0P:(DE-Juel1)VDB5020$$aJia, C. L.$$b5$$uFZJ
000032025 7001_ $$0P:(DE-HGF)0$$aSchumacher, M.$$b6
000032025 7001_ $$0P:(DE-HGF)0$$aSchienle, F.$$b7
000032025 773__ $$0PERI:(DE-600)2013983-4$$a10.1016/S0955-2219(03)00235-8$$gVol. 24, p. 271-276$$p271-276$$q24<271-276$$tJournal of the European Ceramic Society$$v24$$x0955-2219$$y2003
000032025 8567_ $$uhttp://dx.doi.org/10.1016/S0955-2219(03)00235-8
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