001     32025
005     20240610121336.0
024 7 _ |2 DOI
|a 10.1016/S0955-2219(03)00235-8
024 7 _ |2 WOS
|a WOS:000186348500017
037 _ _ |a PreJuSER-32025
041 _ _ |a eng
082 _ _ |a 660
084 _ _ |2 WoS
|a Materials Science, Ceramics
100 1 _ |a Regnery, S.
|b 0
|u FZJ
|0 P:(DE-Juel1)VDB3071
245 _ _ |a (Ba,Sr)TiO3 thin film growth in a batch processing MOCVD reactor
260 _ _ |a Amsterdam [u.a.]
|b Elsevier Science
|c 2003
300 _ _ |a 271-276
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
|0 0
|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Journal of the European Ceramic Society
|x 0955-2219
|0 3891
|y 2
|v 24
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Thin films of different compositions within the (Ba-x,Sr1-x)TiO3 solid solution series were deposited in a planetary multi-wafer MOCVD reactor using different solutions of Sr(thd)(2), Ba(thd)(2) and Ti(O-i-Pr)(2)(thd)(2) precursors. Structural and electrical properties of Pt/BST/Pt MIM structures are presented. On the base of film thickness series ranging from 10 to 150 nm the electrical permittivity is discussed within the dead layer model. The performance of two different liquid precursor delivery systems, characterized by flash evaporation and liquid injection, respectively, are compared for the example of different SrTiO3 films. Finally, the growth of SrTiO3 on Pt(111) is compared with the growth on Si(100) and the electrical characteristics of the Pt/STO/Si MIS structures are discussed. (C) 2003 Elsevier Ltd. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a BaTiO3 and titanates
653 2 0 |2 Author
|a capacitors
653 2 0 |2 Author
|a dielectric properties
653 2 0 |2 Author
|a electron microscopy
653 2 0 |2 Author
|a thin films
700 1 _ |a Ehrhart, P.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB3072
700 1 _ |a Fitsilis, F.
|b 2
|u FZJ
|0 P:(DE-Juel1)VDB3070
700 1 _ |a Waser, R.
|b 3
|u FZJ
|0 P:(DE-Juel1)131022
700 1 _ |a Ding, Y.
|b 4
|u FZJ
|0 P:(DE-Juel1)VDB15124
700 1 _ |a Jia, C. L.
|b 5
|u FZJ
|0 P:(DE-Juel1)VDB5020
700 1 _ |a Schumacher, M.
|b 6
|0 P:(DE-HGF)0
700 1 _ |a Schienle, F.
|b 7
|0 P:(DE-HGF)0
773 _ _ |a 10.1016/S0955-2219(03)00235-8
|g Vol. 24, p. 271-276
|p 271-276
|q 24<271-276
|0 PERI:(DE-600)2013983-4
|t Journal of the European Ceramic Society
|v 24
|y 2003
|x 0955-2219
856 7 _ |u http://dx.doi.org/10.1016/S0955-2219(03)00235-8
909 C O |o oai:juser.fz-juelich.de:32025
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2004
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k IFF-IEM
|l Elektronische Materialien
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB321
|x 0
920 1 _ |k IFF-IMF
|l Mikrostrukturforschung
|d 31.12.2006
|g IFF
|0 I:(DE-Juel1)VDB37
|x 1
920 1 _ |k CNI
|l Center of Nanoelectronic Systems for Information Technology
|d 14.09.2008
|g CNI
|z 381
|0 I:(DE-Juel1)VDB381
|x 2
970 _ _ |a VDB:(DE-Juel1)33461
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-7-20110106
980 _ _ |a I:(DE-Juel1)PGI-5-20110106
980 _ _ |a I:(DE-Juel1)VDB381
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)ER-C-1-20170209
981 _ _ |a I:(DE-Juel1)PGI-7-20110106
981 _ _ |a I:(DE-Juel1)PGI-5-20110106
981 _ _ |a I:(DE-Juel1)VDB381


LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21