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@ARTICLE{Pertsev:32036,
      author       = {Pertsev, N. A. and Rodriguez Contreras, J. and Kukhar, A.
                      I. and Hermanns, B. and Kohlstedt, H. and Waser, R.},
      title        = {{C}oercive field of ultrathin {P}b{Z}r0.52{T}i0.48{O}3
                      epitaxial films},
      journal      = {Applied physics letters},
      volume       = {83},
      issn         = {0003-6951},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-32036},
      pages        = {3356},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {The polarization reversal in single-crystalline
                      ferroelectric films has been investigated experimentally and
                      theoretically. The hysteresis loops were measured for
                      Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to
                      250 nm. These films were grown epitaxially on SrRuO3 bottom
                      electrodes deposited on SrTiO3 substrates. The measurements
                      using Pt top electrodes showed that the coercive field E-c
                      increases drastically as the film becomes thinner, reaching
                      values as high as E(c)approximate to1200 kV/cm. To
                      understand this observation, we calculated the thermodynamic
                      coercive field E-th of a ferroelectric film as a function of
                      the misfit strain S-m in an epitaxial system and showed that
                      E-th strongly depends on S-m. However, the coercive field of
                      ultrathin films, when measured at high frequencies, exceeds
                      the calculated thermodynamic limit. Since this is impossible
                      for an intrinsic coercive field E-c, we conclude that
                      measurements give an apparent E-c rather than the intrinsic
                      one. An enormous increase of apparent coercive field in
                      ultrathin films may be explained by the presence of a
                      conductive nonferroelectric interface layer. (C) 2003
                      American Institute of Physics.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000185954400042},
      doi          = {10.1063/1.1621731},
      url          = {https://juser.fz-juelich.de/record/32036},
}