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@ARTICLE{Pertsev:32036,
author = {Pertsev, N. A. and Rodriguez Contreras, J. and Kukhar, A.
I. and Hermanns, B. and Kohlstedt, H. and Waser, R.},
title = {{C}oercive field of ultrathin {P}b{Z}r0.52{T}i0.48{O}3
epitaxial films},
journal = {Applied physics letters},
volume = {83},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-32036},
pages = {3356},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {The polarization reversal in single-crystalline
ferroelectric films has been investigated experimentally and
theoretically. The hysteresis loops were measured for
Pb(Zr0.52Ti0.48)O-3 films with thicknesses ranging from 8 to
250 nm. These films were grown epitaxially on SrRuO3 bottom
electrodes deposited on SrTiO3 substrates. The measurements
using Pt top electrodes showed that the coercive field E-c
increases drastically as the film becomes thinner, reaching
values as high as E(c)approximate to1200 kV/cm. To
understand this observation, we calculated the thermodynamic
coercive field E-th of a ferroelectric film as a function of
the misfit strain S-m in an epitaxial system and showed that
E-th strongly depends on S-m. However, the coercive field of
ultrathin films, when measured at high frequencies, exceeds
the calculated thermodynamic limit. Since this is impossible
for an intrinsic coercive field E-c, we conclude that
measurements give an apparent E-c rather than the intrinsic
one. An enormous increase of apparent coercive field in
ultrathin films may be explained by the presence of a
conductive nonferroelectric interface layer. (C) 2003
American Institute of Physics.},
keywords = {J (WoSType)},
cin = {IFF-EKM},
ddc = {530},
cid = {I:(DE-Juel1)VDB35},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000185954400042},
doi = {10.1063/1.1621731},
url = {https://juser.fz-juelich.de/record/32036},
}