Hauptseite > Publikationsdatenbank > Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions > print

001     32037
005     20200423203544.0
024 7 _ |a 10.1063/1.1592300
|2 DOI
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024 7 _ |a 2128/17211
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037 _ _ |a PreJuSER-32037
041 _ _ |a eng
082 _ _ |a 530
084 _ _ |2 WoS
|a Physics, Applied
100 1 _ |0 P:(DE-HGF)0
|a Das, J.
|b 0
245 _ _ |a Statistical model for prebreakdown current jumps and breakdown caused by single traps in magnetic tunnel junctions
260 _ _ |a Melville, NY
|b American Institute of Physics
|c 2003
300 _ _ |a 2749 - 2751
336 7 _ |0 PUB:(DE-HGF)16
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440 _ 0 |0 3051
|a Journal of Applied Physics
|v 93
|x 0021-8979
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a To obtain reliable magnetic tunnel junctions (MTJs) for sensor and memory applications, the quality of the Al2O3 tunnel barrier is extremely important. Here, we studied the reliability of MTJs with a 1.6 nm Al2O3 tunnel barrier formed by ultraviolet light assisted oxidation. In the stress measurements, prebreakdown current jumps and, finally, breakdown are observed. We show, by using statistics, that both the current jumps and the final breakdown can be attributed to single trap generation. Moreover, we can relate the current jump height to the trap location. In this way, we reveal the breakdown mechanism in MTJs and illustrate the importance of reliability studies. (C) 2003 American Institute of Physics.
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|a Degraeve, R.
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|a Stein, S.
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|a Kohlstedt, H.
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|a Groeseneken, C. J.
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700 1 _ |0 P:(DE-HGF)0
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700 1 _ |0 P:(DE-HGF)0
|a de Boeck, J.
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856 7 _ |u http://dx.doi.org/10.1063/1.1592300
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