000032040 001__ 32040
000032040 005__ 20200423203544.0
000032040 017__ $$aThis version is available at the following Publisher URL: http://apl.aip.org
000032040 0247_ $$2DOI$$a10.1063/1.1566798
000032040 0247_ $$2WOS$$aWOS:000182104900043
000032040 0247_ $$2Handle$$a2128/1242
000032040 037__ $$aPreJuSER-32040
000032040 041__ $$aeng
000032040 082__ $$a530
000032040 084__ $$2WoS$$aPhysics, Applied
000032040 1001_ $$0P:(DE-Juel1)VDB25976$$aVasco, E.$$b0$$uFZJ
000032040 245__ $$aEarly self-assembled stages in epitaxial SrRuO3 on LaAlO3
000032040 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2003
000032040 300__ $$a2497
000032040 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000032040 3367_ $$2DataCite$$aOutput Types/Journal article
000032040 3367_ $$00$$2EndNote$$aJournal Article
000032040 3367_ $$2BibTeX$$aARTICLE
000032040 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000032040 3367_ $$2DRIVER$$aarticle
000032040 440_0 $$0562$$aApplied Physics Letters$$v82$$x0003-6951
000032040 500__ $$aRecord converted from VDB: 12.11.2012
000032040 520__ $$aThe stress-induced self-assembled growth of SrRuO3 on LaAlO3 was studied by atomic force microscopy and x-ray diffraction. SrRuO3 epitaxially grown on LaAlO3 by pulsed laser deposition shows two types of out-of-plane arrangements and four in-plane matches. The lattice mismatch (stress) produced by these arrangements was estimated and correlated with the SrRuO3 growth dynamics. After 1 nm, the SrRuO3 film surface exhibits a ripple structure, which serves as a template for the development of a nanopattern of flat islands. These islands coalesce anisotropically resulting in a regular array of "infinite" wires. The wire coalescence for the 12-20 nm thick film nullifies the surface symmetry, while SrRuO3 keeps growing in three dimensions. (C) 2003 American Institute of Physics.
000032040 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
000032040 588__ $$aDataset connected to Web of Science
000032040 650_7 $$2WoSType$$aJ
000032040 7001_ $$0P:(DE-Juel1)VDB5464$$aDittmann, R.$$b1$$uFZJ
000032040 7001_ $$0P:(DE-Juel1)130751$$aKarthäuser, S.$$b2$$uFZJ
000032040 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$uFZJ
000032040 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.1566798$$gVol. 82, p. 2497$$p2497$$q82<2497$$tApplied physics letters$$v82$$x0003-6951$$y2003
000032040 8567_ $$uhttp://hdl.handle.net/2128/1242$$uhttp://dx.doi.org/10.1063/1.1566798
000032040 8564_ $$uhttps://juser.fz-juelich.de/record/32040/files/33499.pdf$$yOpenAccess
000032040 8564_ $$uhttps://juser.fz-juelich.de/record/32040/files/33499.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000032040 8564_ $$uhttps://juser.fz-juelich.de/record/32040/files/33499.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000032040 8564_ $$uhttps://juser.fz-juelich.de/record/32040/files/33499.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000032040 909CO $$ooai:juser.fz-juelich.de:32040$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000032040 9131_ $$0G:(DE-Juel1)FUEK252$$bInformation$$kI01$$lInformationstechnologie mit nanoelektronischen Systemen$$vMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$x0
000032040 9141_ $$y2003
000032040 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000032040 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000032040 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
000032040 970__ $$aVDB:(DE-Juel1)33499
000032040 980__ $$aVDB
000032040 980__ $$aJUWEL
000032040 980__ $$aConvertedRecord
000032040 980__ $$ajournal
000032040 980__ $$aI:(DE-Juel1)PGI-7-20110106
000032040 980__ $$aUNRESTRICTED
000032040 980__ $$aFullTexts
000032040 9801_ $$aFullTexts
000032040 981__ $$aI:(DE-Juel1)PGI-7-20110106