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000032044 084__ $$2WoS$$aEngineering, Electrical & Electronic
000032044 084__ $$2WoS$$aPhysics, Applied
000032044 084__ $$2WoS$$aPhysics, Condensed Matter
000032044 1001_ $$0P:(DE-Juel1)VDB15087$$aSchmitz, S.$$b0$$uFZJ
000032044 245__ $$aLeakage current measurements of STO and BST thin films interpreted by the 'dead' layer model
000032044 260__ $$aLondon [u.a.]$$bTaylor & Francis$$c2002
000032044 300__ $$a233
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000032044 440_0 $$02659$$aIntegrated Ferroelectrics$$v46$$x1058-4587
000032044 500__ $$aRecord converted from VDB: 12.11.2012
000032044 520__ $$aElectrical properties of Strontium-Titanate (STO) and Barium-Strontium-Titanate (BST) thin films capacitors were investigated. The STO films were fabricated by chemical solution deposition (CSD) with thickness between 50 and 150 nm, while the BST films were deposited by metal organic chemical vapor deposition (MOCVD) with thickness between 20 and 110 nm. All films were grown on platinized and oxidized silicon wafers. As top electrodes platinum (Pt) was deposited on top of the ceramic film by sputtering. The electrode size varied between 8*10(-3) to 1 mm(2) . The leakage current measurements were performed at different temperatures ranging from 15 to 200degreesC and the applied voltage varied between 0 and +/-4 V. Capacitance was measured at RT up to +/-3 V bias at 1 kHz and 50 mV oscillation voltage.The main results are: The effective barrier heights extracted from the temperature dependence of leakage current are about 1.35 eV for STO and 0.94 eV for BST for the temperature region >100degreesC. The field dependencies of the leakage current show almost perfect linear behavior in a "Schottky" plot for BST while STO reveals 2 separated Schottky regions. The permittivity extracted from the field dependence using the simple thermionic emission model with Schottky lowering results in rather improbable values of the effective Richardson constant A(*) and unphysical values of the relative optical permittivity, epsilon(r,opt) <1.The use of a modified model with low permittivity interface layers ("dead layers"), as suggested by the thickness dependence of the inverse capacitance, solved these difficulties. The parameters extracted from fits of this model are discussed.
000032044 536__ $$0G:(DE-Juel1)FUEK252$$2G:(DE-HGF)$$aMaterialien, Prozesse und Bauelemente für die  Mikro- und Nanoelektronik$$cI01$$x0
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000032044 65320 $$2Author$$aleakage current
000032044 65320 $$2Author$$aSrTiO3
000032044 65320 $$2Author$$a(Ba,Sr)TiO3
000032044 65320 $$2Author$$adead layers
000032044 65320 $$2Author$$aSchottky contact
000032044 65320 $$2Author$$aSchottky barrier height
000032044 65320 $$2Author$$acapacitance
000032044 7001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b1$$uFZJ
000032044 773__ $$0PERI:(DE-600)2037916-X$$a10.1080/10584580190044371$$gVol. 46, p. 233$$p233$$q46<233$$tIntegrated ferroelectrics$$v46$$x1058-4587$$y2002
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000032044 9141_ $$aNachtrag$$y2002
000032044 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000032044 9201_ $$0I:(DE-Juel1)VDB35$$d31.12.2003$$gIFF$$kIFF-EKM$$lElektrokeramische Materialien$$x0
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