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@ARTICLE{Schmitz:32044,
      author       = {Schmitz, S. and Schroeder, H.},
      title        = {{L}eakage current measurements of {STO} and {BST} thin
                      films interpreted by the 'dead' layer model},
      journal      = {Integrated ferroelectrics},
      volume       = {46},
      issn         = {1058-4587},
      address      = {London [u.a.]},
      publisher    = {Taylor $\&$ Francis},
      reportid     = {PreJuSER-32044},
      pages        = {233},
      year         = {2002},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Electrical properties of Strontium-Titanate (STO) and
                      Barium-Strontium-Titanate (BST) thin films capacitors were
                      investigated. The STO films were fabricated by chemical
                      solution deposition (CSD) with thickness between 50 and 150
                      nm, while the BST films were deposited by metal organic
                      chemical vapor deposition (MOCVD) with thickness between 20
                      and 110 nm. All films were grown on platinized and oxidized
                      silicon wafers. As top electrodes platinum (Pt) was
                      deposited on top of the ceramic film by sputtering. The
                      electrode size varied between 8*10(-3) to 1 mm(2) . The
                      leakage current measurements were performed at different
                      temperatures ranging from 15 to 200degreesC and the applied
                      voltage varied between 0 and +/-4 V. Capacitance was
                      measured at RT up to +/-3 V bias at 1 kHz and 50 mV
                      oscillation voltage.The main results are: The effective
                      barrier heights extracted from the temperature dependence of
                      leakage current are about 1.35 eV for STO and 0.94 eV for
                      BST for the temperature region >100degreesC. The field
                      dependencies of the leakage current show almost perfect
                      linear behavior in a "Schottky" plot for BST while STO
                      reveals 2 separated Schottky regions. The permittivity
                      extracted from the field dependence using the simple
                      thermionic emission model with Schottky lowering results in
                      rather improbable values of the effective Richardson
                      constant A(*) and unphysical values of the relative optical
                      permittivity, epsilon(r,opt) <1.The use of a modified model
                      with low permittivity interface layers ("dead layers"), as
                      suggested by the thickness dependence of the inverse
                      capacitance, solved these difficulties. The parameters
                      extracted from fits of this model are discussed.},
      keywords     = {J (WoSType)},
      cin          = {IFF-EKM},
      ddc          = {620},
      cid          = {I:(DE-Juel1)VDB35},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Engineering, Electrical $\&$ Electronic / Physics, Applied
                      / Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000179828900026},
      doi          = {10.1080/10584580190044371},
      url          = {https://juser.fz-juelich.de/record/32044},
}