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000032047 084__ $$2WoS$$aPhysics, Applied
000032047 1001_ $$0P:(DE-Juel1)VDB3130$$aSchroeder, H.$$b0$$uFZJ
000032047 245__ $$aThe thickness dependence of leakage current in thin films
000032047 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2003
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000032047 440_0 $$0562$$aApplied Physics Letters$$v83$$x0003-6951
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000032047 520__ $$aThe leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal-oxide-semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers. (C) 2003 American Institute of Physics.
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000032047 7001_ $$0P:(DE-Juel1)VDB15087$$aSchmitz, S.$$b1$$uFZJ
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