TY  - JOUR
AU  - Schroeder, H.
AU  - Schmitz, S.
TI  - The thickness dependence of leakage current in thin films
JO  - Applied physics letters
VL  - 83
SN  - 0003-6951
CY  - Melville, NY
PB  - American Institute of Physics
M1  - PreJuSER-32047
SP  - 4381
PY  - 2003
N1  - Record converted from VDB: 12.11.2012
AB  - The leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal-oxide-semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers. (C) 2003 American Institute of Physics.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000186662000035
DO  - DOI:10.1063/1.1629141
UR  - https://juser.fz-juelich.de/record/32047
ER  -