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| 001 | 32047 | ||
| 005 | 20200423203544.0 | ||
| 017 | _ | _ | |a This version is available at the following Publisher URL: http://apl.aip.org |
| 024 | 7 | _ | |a 10.1063/1.1629141 |2 DOI |
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| 024 | 7 | _ | |a 2128/1243 |2 Handle |
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| 041 | _ | _ | |a eng |
| 082 | _ | _ | |a 530 |
| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |a Schroeder, H. |b 0 |u FZJ |0 P:(DE-Juel1)VDB3130 |
| 245 | _ | _ | |a The thickness dependence of leakage current in thin films |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2003 |
| 300 | _ | _ | |a 4381 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a article |2 DRIVER |
| 440 | _ | 0 | |a Applied Physics Letters |x 0003-6951 |0 562 |v 83 |
| 500 | _ | _ | |a Record converted from VDB: 12.11.2012 |
| 520 | _ | _ | |a The leakage current through high-permittivity perovskite thin films in the nanometer range is of great technological interest because of the possible applications of these insulating films in future submicroelectronic devices such as dielectrics in Gbit dynamic random access memories or gate oxides in metal-oxide-semiconductor field-effect transistors. The experimental result of decreasing leakage current with decreasing thickness of the dielectric for the same externally applied field can be described by using a model combining thermionic emission at the electrode/dielectric interface and a low-mobility, high-permittivity dielectric with low-permittivity layers at the interfaces, the so-called dead layers. (C) 2003 American Institute of Physics. |
| 536 | _ | _ | |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |c I01 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK252 |x 0 |
| 588 | _ | _ | |a Dataset connected to Web of Science |
| 650 | _ | 7 | |a J |2 WoSType |
| 700 | 1 | _ | |a Schmitz, S. |b 1 |u FZJ |0 P:(DE-Juel1)VDB15087 |
| 773 | _ | _ | |a 10.1063/1.1629141 |g Vol. 83, p. 4381 |p 4381 |q 83<4381 |0 PERI:(DE-600)1469436-0 |t Applied physics letters |v 83 |y 2003 |x 0003-6951 |
| 856 | 7 | _ | |u http://dx.doi.org/10.1063/1.1629141 |u http://hdl.handle.net/2128/1243 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/32047/files/33512.pdf |y OpenAccess |
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| 913 | 1 | _ | |k I01 |v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |l Informationstechnologie mit nanoelektronischen Systemen |b Information |0 G:(DE-Juel1)FUEK252 |x 0 |
| 914 | 1 | _ | |y 2003 |
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