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@ARTICLE{Mrquez:32205,
author = {Márquez, K. and Staikov, G. and Schultze, J. W.},
title = {{S}ilver {D}eposition on {S}ilicon and {G}lassy {C}arbon:
{A} {C}omparative {S}tudy in {C}yanide {M}edium},
journal = {Electrochimica acta},
volume = {48},
issn = {0013-4686},
address = {New York, NY [u.a.]},
publisher = {Elsevier},
reportid = {PreJuSER-32205},
pages = {875 - 882},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {Nucleation and growth during Ag deposition on n-Si (111)
have been studied and compared with results obtained on
glassy carbon (GC). The initial stages of metal deposition
from a cyanide electrolyte (pH 14) were investigated. using
conventional electrochemical techniques combined with AFM
and SEM. Relevant kinetic parameters were obtained from the
analysis of current transients on the basis of existing
models for electrochemical nucleation and diffusion
controlled growth. On n-Si a clear change in the Ag
deposition mechanism from progressive (E = -0.80 V vs.
standard hydrogen electrode, SHE) to instantaneous (E =
-0.90 V vs. SHE) nucleation is observed, while on GC an
intermediate behaviour is found at both potentials. A strong
dependence of the nucleation site density No with potential
E was observed on both Si and GC, being this effect
particularly important in the case of the semiconductor.
Therefore, the driving force for Ag nucleation
(supersaturation) on Si was varied both by changing the
electrode potential E at C-AgCN = constant and the
concentration C-AgCN at E = constant. On silicon, the
critical silver nucleus was found to, be composed by one
atom within the studied potential range. The stability of
the Ag clusters in the cyanide electrolyte was found to be
strongly influenced by the presence of oxygen. Studies of
the solid state n-Si/Ag contact indicate an ideal Schottky
behaviour and the formation of a high quality junction. (C)
2002 Elsevier Science Ltd. All rights reserved.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {540},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Electrochemistry},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000180995700010},
doi = {10.1016/S0013-4686(02)00781-8},
url = {https://juser.fz-juelich.de/record/32205},
}