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@ARTICLE{Mrquez:32205,
      author       = {Márquez, K. and Staikov, G. and Schultze, J. W.},
      title        = {{S}ilver {D}eposition on {S}ilicon and {G}lassy {C}arbon:
                      {A} {C}omparative {S}tudy in {C}yanide {M}edium},
      journal      = {Electrochimica acta},
      volume       = {48},
      issn         = {0013-4686},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-32205},
      pages        = {875 - 882},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Nucleation and growth during Ag deposition on n-Si (111)
                      have been studied and compared with results obtained on
                      glassy carbon (GC). The initial stages of metal deposition
                      from a cyanide electrolyte (pH 14) were investigated. using
                      conventional electrochemical techniques combined with AFM
                      and SEM. Relevant kinetic parameters were obtained from the
                      analysis of current transients on the basis of existing
                      models for electrochemical nucleation and diffusion
                      controlled growth. On n-Si a clear change in the Ag
                      deposition mechanism from progressive (E = -0.80 V vs.
                      standard hydrogen electrode, SHE) to instantaneous (E =
                      -0.90 V vs. SHE) nucleation is observed, while on GC an
                      intermediate behaviour is found at both potentials. A strong
                      dependence of the nucleation site density No with potential
                      E was observed on both Si and GC, being this effect
                      particularly important in the case of the semiconductor.
                      Therefore, the driving force for Ag nucleation
                      (supersaturation) on Si was varied both by changing the
                      electrode potential E at C-AgCN = constant and the
                      concentration C-AgCN at E = constant. On silicon, the
                      critical silver nucleus was found to, be composed by one
                      atom within the studied potential range. The stability of
                      the Ag clusters in the cyanide electrolyte was found to be
                      strongly influenced by the presence of oxygen. Studies of
                      the solid state n-Si/Ag contact indicate an ideal Schottky
                      behaviour and the formation of a high quality junction. (C)
                      2002 Elsevier Science Ltd. All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Electrochemistry},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000180995700010},
      doi          = {10.1016/S0013-4686(02)00781-8},
      url          = {https://juser.fz-juelich.de/record/32205},
}