001     32205
005     20180210142447.0
024 7 _ |2 DOI
|a 10.1016/S0013-4686(02)00781-8
024 7 _ |2 WOS
|a WOS:000180995700010
037 _ _ |a PreJuSER-32205
041 _ _ |a eng
082 _ _ |a 540
084 _ _ |2 WoS
|a Electrochemistry
100 1 _ |a Márquez, K.
|b 0
|0 P:(DE-HGF)0
245 _ _ |a Silver Deposition on Silicon and Glassy Carbon: A Comparative Study in Cyanide Medium
260 _ _ |a New York, NY [u.a.]
|b Elsevier
|c 2003
300 _ _ |a 875 - 882
336 7 _ |a Journal Article
|0 PUB:(DE-HGF)16
|2 PUB:(DE-HGF)
336 7 _ |a Output Types/Journal article
|2 DataCite
336 7 _ |a Journal Article
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|2 EndNote
336 7 _ |a ARTICLE
|2 BibTeX
336 7 _ |a JOURNAL_ARTICLE
|2 ORCID
336 7 _ |a article
|2 DRIVER
440 _ 0 |a Electrochimica Acta
|x 0013-4686
|0 1776
|y 7
|v 48
500 _ _ |a Record converted from VDB: 12.11.2012
520 _ _ |a Nucleation and growth during Ag deposition on n-Si (111) have been studied and compared with results obtained on glassy carbon (GC). The initial stages of metal deposition from a cyanide electrolyte (pH 14) were investigated. using conventional electrochemical techniques combined with AFM and SEM. Relevant kinetic parameters were obtained from the analysis of current transients on the basis of existing models for electrochemical nucleation and diffusion controlled growth. On n-Si a clear change in the Ag deposition mechanism from progressive (E = -0.80 V vs. standard hydrogen electrode, SHE) to instantaneous (E = -0.90 V vs. SHE) nucleation is observed, while on GC an intermediate behaviour is found at both potentials. A strong dependence of the nucleation site density No with potential E was observed on both Si and GC, being this effect particularly important in the case of the semiconductor. Therefore, the driving force for Ag nucleation (supersaturation) on Si was varied both by changing the electrode potential E at C-AgCN = constant and the concentration C-AgCN at E = constant. On silicon, the critical silver nucleus was found to, be composed by one atom within the studied potential range. The stability of the Ag clusters in the cyanide electrolyte was found to be strongly influenced by the presence of oxygen. Studies of the solid state n-Si/Ag contact indicate an ideal Schottky behaviour and the formation of a high quality junction. (C) 2002 Elsevier Science Ltd. All rights reserved.
536 _ _ |a Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|c I01
|2 G:(DE-HGF)
|0 G:(DE-Juel1)FUEK252
|x 0
588 _ _ |a Dataset connected to Web of Science
650 _ 7 |a J
|2 WoSType
653 2 0 |2 Author
|a electrodeposition
653 2 0 |2 Author
|a nucleation
653 2 0 |2 Author
|a silicon
653 2 0 |2 Author
|a glassy carbon
653 2 0 |2 Author
|a silver
700 1 _ |a Staikov, G.
|b 1
|u FZJ
|0 P:(DE-Juel1)VDB13645
700 1 _ |a Schultze, J. W.
|b 2
|0 P:(DE-HGF)0
773 _ _ |a 10.1016/S0013-4686(02)00781-8
|g Vol. 48, p. 875 - 882
|p 875 - 882
|q 48<875 - 882
|0 PERI:(DE-600)1483548-4
|t Electrochimica acta
|v 48
|y 2003
|x 0013-4686
856 7 _ |u http://dx.doi.org/10.1016/S0013-4686(02)00781-8
909 C O |o oai:juser.fz-juelich.de:32205
|p VDB
913 1 _ |k I01
|v Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
|l Informationstechnologie mit nanoelektronischen Systemen
|b Information
|0 G:(DE-Juel1)FUEK252
|x 0
914 1 _ |y 2003
915 _ _ |0 StatID:(DE-HGF)0010
|a JCR/ISI refereed
920 1 _ |k ISG-3
|l Institut für Grenzflächen und Vakuumtechnologien
|d 31.12.2006
|g ISG
|0 I:(DE-Juel1)VDB43
|x 0
970 _ _ |a VDB:(DE-Juel1)34031
980 _ _ |a VDB
980 _ _ |a ConvertedRecord
980 _ _ |a journal
980 _ _ |a I:(DE-Juel1)PGI-3-20110106
980 _ _ |a UNRESTRICTED
981 _ _ |a I:(DE-Juel1)PGI-3-20110106


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