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@ARTICLE{Garca:32207,
      author       = {García, S. G. and Salinas, D. R. and Mayer, C. E. and
                      Lorenz, W. J. and Staikov, G.},
      title        = {{STM} {T}ip-{I}nduced {L}ocal {E}lectrochemical
                      {D}issolution of {S}ilver},
      journal      = {Electrochimica acta},
      volume       = {48},
      issn         = {0013-4686},
      address      = {New York, NY [u.a.]},
      publisher    = {Elsevier},
      reportid     = {PreJuSER-32207},
      pages        = {1279 - 1285},
      year         = {2003},
      note         = {Record converted from VDB: 12.11.2012},
      abstract     = {Local dissolution/deposition processes under in situ
                      scanning tunneling microscopy (STM) imaging conditions are
                      studied in the systems Ag(111)/Ag+, ClO4- and Ag(111)/Ag+,
                      SO42-. The results show that in both systems the local
                      kinetics of these processes strongly depend on the
                      polarization conditions. At STM-tip potentials more positive
                      than the Ag/Ag+ equilibrium potential, a local dissolution
                      of the Ag(111) substrate is observed even at cathodic
                      substrate overpotentials at which the overall substrate
                      current density is cathodic. This tip-induced Ag dissolution
                      is in agreement with results obtained recently in the system
                      Cu((111))/Cu2+. The enhanced local Ag dissolution is
                      explained by a reduced Ag+ concentration underneath the STM
                      tip promoted by both an electrostatic repulsion of Ag+ and a
                      reduction of the mass transport due to the shielding effect
                      of the tip. The possibility for a preparation of negative Ag
                      nanostructures by STM tip-induced electrochemical
                      dissolution is demonstrated. (C) 2003 Elsevier Science Ltd.
                      All rights reserved.},
      keywords     = {J (WoSType)},
      cin          = {ISG-3},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB43},
      pnm          = {Materialien, Prozesse und Bauelemente für die Mikro- und
                      Nanoelektronik},
      pid          = {G:(DE-Juel1)FUEK252},
      shelfmark    = {Electrochemistry},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000181814400018},
      doi          = {10.1016/S0013-4686(02)00836-8},
      url          = {https://juser.fz-juelich.de/record/32207},
}