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@ARTICLE{Mai:32208,
author = {Mai, T. T. and Schultze, J. W. and Staikov, G.},
title = {{M}icrostructured {M}etallization of {I}nsulating
{P}olymers},
journal = {Electrochimica acta},
volume = {48},
issn = {0013-4686},
address = {New York, NY [u.a.]},
publisher = {Elsevier},
reportid = {PreJuSER-32208},
pages = {3021},
year = {2003},
note = {Record converted from VDB: 12.11.2012},
abstract = {Direct Ni electrodeposition on insulating polymers by the
so-called PLATO technique is studied and the application of
this technique for microstructured metallization is
investigated. Propagation behavior, surface morphology,
conductivity and thickness of a deposited metal layer are
characterized using microscopy, AFM, four-point conductivity
and XPS sputter measurements. Two layers are formed during
metal deposition: primary layer and secondary layer. Both
layers propagate with constant rates during the first 60 s
and the propagation rates are influenced by the
metallization potential. The primary layer has hemispherical
morphology, low conductivity and an uneven thickness of
about 25-100 nm. The secondary layer has the repetition
morphology of the primary and higher roughness (R-a(prim) =
40 nm, R-a(sec) = 150 nm), higher conductivity
(sigma(sec)/sigma(prim) = 10(8)/10(10)) and a thickness of
100-200 nm. The high lateral propagation rate of the metal
strip during metal deposition offers possibilities for
metallization of insulating microstructures. Routines for
microstructured metallization using PLATO technique are
proposed and examples for the applications are demonstrated.
(C) 2003 Elsevier Ltd. All rights reserved.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {540},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Electrochemistry},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000185123400020},
doi = {10.1016/S0013-4686(03)00369-4},
url = {https://juser.fz-juelich.de/record/32208},
}