TY  - JOUR
AU  - Paul, N.
AU  - Voigtländer, B.
TI  - Removal of the surfactant in Bi/Ge/Si(111) surfactant-mediated epitaxy
JO  - Surface science
VL  - 551
SN  - 0039-6028
CY  - Amsterdam
PB  - Elsevier
M1  - PreJuSER-32229
SP  - 80 - 90
PY  - 2004
N1  - Record converted from VDB: 12.11.2012
AB  - Surfactant-mediated epitaxy of 6 nm Ge on a Bi terminated Si(111) surface results in a smooth, two dimensional, defect free Ge film on Si(111) where 1 monolayer Bi covers the film surface. Heating the Ge film results in desorption of bismuth but the Ge film breaks up and deep holes form. Using ion beam sputtering we have removed the Bi surfactant from the film in situ and the remaining Ge/Si film is still two dimensional, smooth and defect free. Subsequent deposition of 5 bilayers germanium on the sputtered surface leads to growth of 3D islands as observed by scanning tunneling microscopy (STM). This behavior can be explained by residual stress in the Ge film. (C) 2003 Elsevier B.V. All rights reserved.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000189230900010
DO  - DOI:10.1016/j.susc.2003.11.046
UR  - https://juser.fz-juelich.de/record/32229
ER  -