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@ARTICLE{Paul:32229,
author = {Paul, N. and Voigtländer, B.},
title = {{R}emoval of the surfactant in {B}i/{G}e/{S}i(111)
surfactant-mediated epitaxy},
journal = {Surface science},
volume = {551},
issn = {0039-6028},
address = {Amsterdam},
publisher = {Elsevier},
reportid = {PreJuSER-32229},
pages = {80 - 90},
year = {2004},
note = {Record converted from VDB: 12.11.2012},
abstract = {Surfactant-mediated epitaxy of 6 nm Ge on a Bi terminated
Si(111) surface results in a smooth, two dimensional, defect
free Ge film on Si(111) where 1 monolayer Bi covers the film
surface. Heating the Ge film results in desorption of
bismuth but the Ge film breaks up and deep holes form. Using
ion beam sputtering we have removed the Bi surfactant from
the film in situ and the remaining Ge/Si film is still two
dimensional, smooth and defect free. Subsequent deposition
of 5 bilayers germanium on the sputtered surface leads to
growth of 3D islands as observed by scanning tunneling
microscopy (STM). This behavior can be explained by residual
stress in the Ge film. (C) 2003 Elsevier B.V. All rights
reserved.},
keywords = {J (WoSType)},
cin = {ISG-3},
ddc = {540},
cid = {I:(DE-Juel1)VDB43},
pnm = {Materialien, Prozesse und Bauelemente für die Mikro- und
Nanoelektronik},
pid = {G:(DE-Juel1)FUEK252},
shelfmark = {Chemistry, Physical / Physics, Condensed Matter},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000189230900010},
doi = {10.1016/j.susc.2003.11.046},
url = {https://juser.fz-juelich.de/record/32229},
}