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000003298 084__ $$2WoS$$aChemistry, Physical
000003298 084__ $$2WoS$$aPhysics, Condensed Matter
000003298 1001_ $$0P:(DE-Juel1)VDB9876$$aPodgursky, E. G.$$b0$$uFZJ
000003298 245__ $$aCo on thin Al2O3 films grown on Ni3Al(100)
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000003298 520__ $$aThe growth of Co on thin Al2O3 layers on Ni3Al(1 0 0) was investigated by Auger electron spectroscopy, high resolution electron energy loss spectroscopy (EELS), and scanning tunneling microscopy. At 300 K, Co grows in three-dimensional clusters on top of the Al2O3 layer. A defect structure of the alumina layer plays a crucial role during the early stage of Co growth. After deposition of 10 Angstrom of Co, a complete screening of the dipoles of the Al2O3 layer due to the Co film is found in the EELS measurements. Annealing the Co film reveals a process of coalescence of Co clusters and, above 700 K, diffusion of the Co atoms through the oxide film into the substrate takes place. (C) 2003 Elsevier Science B.V. All rights reserved.
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000003298 65320 $$2Author$$acobalt
000003298 65320 $$2Author$$aaluminum oxide
000003298 65320 $$2Author$$asurface defects
000003298 65320 $$2Author$$asurface diffusion
000003298 65320 $$2Author$$agrowth
000003298 65320 $$2Author$$aclusters
000003298 65320 $$2Author$$aAuger electron spectroscopy
000003298 65320 $$2Author$$ascanning tunneling microscopy
000003298 65320 $$2Author$$aelectron energy loss spectroscopy (EELS)
000003298 7001_ $$0P:(DE-Juel1)VDB5492$$aCostina, I.$$b1$$uFZJ
000003298 7001_ $$0P:(DE-Juel1)VDB5400$$aFranchy, R.$$b2$$uFZJ
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000003298 9201_ $$0I:(DE-Juel1)VDB43$$d31.12.2006$$gISG$$kISG-3$$lInstitut für Grenzflächen und Vakuumtechnologien$$x0
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